Zobrazeno 1 - 10
of 145
pro vyhledávání: '"Wen Luh Yang"'
Publikováno v:
Materials Science Forum. 1069:55-59
This study investigated the impact of different Polyamic Acid (PAA) solid content on Polyimide (PI) film precursors, adjusting the molecular chain density after dehydration and cyclization to improve the operating voltage and leakage current of resis
Publikováno v:
ACS applied materialsinterfaces. 14(36)
Monitoring the hydrogen gas (H
Publikováno v:
ACS Applied Bio Materials. 3:5966-5973
In this study, we report nitrogen-doped nanodiamond (ND)-integrated crushed graphene (Gr) nanoflakes on nickel hydroxide (Ni(OH)2, named NH) nanostructures for highly stable nonenzymatic glucose se...
Publikováno v:
IEEE Transactions on Electron Devices. 67:277-282
We developed organic resistive random access memory (ReRAM) devices using spin-coated polyimide (PI) as the resistive layer. In this article, the effect of the chain length of the PI macromolecules on the electrical performance of ReRAM devices was s
Publikováno v:
ACS applied bio materials. 3(9)
In this study, we report nitrogen-doped nanodiamond (ND)-integrated crushed graphene (Gr) nanoflakes on nickel hydroxide (Ni(OH)
Publikováno v:
Applied Physics Letters. 121:213301
Organic nonvolatile photomemory devices have drawn considerable attention in the field of optical computing. However, most organic nonvolatile photomemory devices use a charge-trap-type architecture that is complex and difficult to miniaturize. This
Autor:
Chi-Chang Wu, Hsin-Chiang You, Yu-Hsien Lin, Chia-Jung Yang, Yu-Ping Hsiao, Tun-Po Liao, Wen-Luh Yang
Publikováno v:
Materials, Vol 11, Iss 2, p 265 (2018)
Electrochemical-metallization-type resistive random access memories (ReRAMs) show promising performance as next-generation nonvolatile memory. In this paper, the Cu chemical displacement technique (CDT) is used to form the bottom electrode of ReRAM d
Externí odkaz:
https://doaj.org/article/532f7f63026c458aba34ea34413f6cb5
Publikováno v:
2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:085002
Al05Ga0.5N/n-Al0.3Ga0.7N/AlN metal-oxide-semiconductor heterostructure field- effect transistors (MOS-HFETs), grown on a SiC substrate, with composite Al2O3/in situ SiN passivation and Al2O3 gate dielectric are investigated. 20 nm thick high-k Al2O3
Autor:
Jen Fin Lin, Chung-Jen Chung, Chang-Hong Shen, Chang-Fu Han, Chang Shuo Chang, Wen-Luh Yang, Gien-Huang Wu, Cheng-Li Lin, Rong-Hong Tasi
Publikováno v:
Sensors and Actuators A: Physical. 285:685-699
In the present study, upper and lower substrates made of p-type Si were bonded using benzocyclobutene (BCB) glue, which was then solidified via rapid thermal annealing at various chamber atmospheres. Inductively coupled plasma was applied to prepare