Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Wen Lu Yang"'
Autor:
Xiao-Yu Zhang, Lin-An Yang, Xiao-Lin Hu, Wen-Lu Yang, Yu-Chen Liu, Yang Li, Xiao-Hua Ma, Yue Hao
Publikováno v:
IEEE Transactions on Electron Devices. 69:1006-1013
Autor:
Bao-quan Song, Li-wei Sui, Wen-lu Yang, Hong-fu Jiang, Zong-lun Sha, Xiao-hai Zhang, Quan Wen, Jin-hao Nan
Publikováno v:
Springer Series in Geomechanics and Geoengineering ISBN: 9789811607622
Beach-bar deposit is a typical sedimentary system in the shore shallow lake sedimentary environment, which is mainly composed of thin interbedded deposits. In recent years, with the exploration of lithologic reservoirs, it has gradually become the fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29d8f0595c4a3483dbb2693f659e4668
https://doi.org/10.1007/978-981-16-0761-5_245
https://doi.org/10.1007/978-981-16-0761-5_245
Publikováno v:
Chinese Physics B. 31:058505
A GaN-based high electron mobility transistor (HEMT) with p-GaN islands buried layer (PIBL) for terahertz applications is proposed. The introduction of a p-GaN island redistributes the electric field in the gate–drain channel region, thereby promot
Publikováno v:
Springer Series in Geomechanics and Geoengineering ISBN: 9789811524844
Paleogeomorphic restoration plays an important role in sedimentary basin research which has a great geological significance of establishment the sedimentary system and understanding of hydrocarbon accumulation rules. Based on 3D seismic data, drillin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e28b11f8389d8b9ad70eab69647fdff5
https://doi.org/10.1007/978-981-15-2485-1_306
https://doi.org/10.1007/978-981-15-2485-1_306
Publikováno v:
Semiconductor Science and Technology. 36:025001
In this paper, the effects of n-type GaN deep level defects on the DC, small signal AC, and radio frequency (RF) characteristics of Ni/GaN Schottky barrier impact ionization avalanche transit time (IMPATT) diode are investigated. A double avalanche t
Publikováno v:
Semiconductor Science and Technology. 36:015018
AlInGaN lattice-matched to GaN is proposed as a barrier for double-barrier single quantum well structure resonant tunneling diodes (RTDs), and it achievesnearly strain-free RTD with low In composition and thereby relatively high manufacturability. Co
Publikováno v:
Superlattices and Microstructures. 139:106405
This paper reports a study investigating the noise performance of Ni/GaN Schottky barrier impact-ionization-avalanche-transit-time (IMPATT) diodes based on the polar- and nonpolar-oriented wurtzite GaN by a numerical simulation. Results show that the
Autor:
Wen Lu Yang, Ying Zhe Lu
Publikováno v:
Advanced Materials Research. :1052-1059
A design of wireless pulse signal acquisition system for status monitoring of ship navigators has been presented. The system employs STC12LE5608AD as controller for timing acquisition of the pulse signal. And then the data are written to the register
Autor:
Tan Fu Lei, W.H. Chang, Chih Peng Lu, Tien-Sheng Chao, Wen Lu Yang, Ming Chi Liaw, Ming Shih Tsai, Chao Chyi Chen, Tung-Ming Pan
Publikováno v:
IEEE Electron Device Letters. 21:338-340
Novel cleaning solutions were developed for post-CMP process, surfactant tetra methyl ammonium hydroxide (TMAH) and/or chelating agent ethylene diamine tetra acetic acid (EDTA) were added into the diluted ammonium hydroxide (NH/sub 4/OH+H/sub 2/O) al
Autor:
Wen-Lu Yang, Yu-Hong Liu
Publikováno v:
Proceedings of 2004 International Conference on Machine Learning and Cybernetics (IEEE Cat. No.04EX826).
A synergic multi-base structure of an intelligent decision support system for navigation collision avoidance is presented in this article. Each base, including rule knowledge base, fuzzy case base, object oriented model base and rule text base, is es