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pro vyhledávání: '"Wen Ling M. Huang"'
Publikováno v:
IEEE Transactions on Electron Devices. 48:1428-1437
Low-frequency (LF) noise, a key figure-of-merit to evaluate device technology for RF systems on a chip, is a significant obstacle for CMOS technology, especially for partially depleted (PD) silicon-on-insulator (SOI) CMOS due to the well-known kink-i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67dfd4787fc8024caa0cc2f10cdd9c12
https://doi.org/10.1109/16.930662
https://doi.org/10.1109/16.930662
