Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Wen Hsien Tzeng"'
Autor:
Chun Chih Kuo, Horng-Chih Lin, Kow-Ming Chang, Ming Jinn Tsai, Wen Hsien Tzeng, Frederick T. Chen, Kou-Chen Liu, Yi Chun Chan, Chia Wen Zhong, Pang-Shiu Chen, Heng Yuan Lee
Publikováno v:
Surface and Coatings Technology. 231:563-566
In this study, the influence of indium tin oxide (ITO) top electrodes with different oxygen contents on the resistive switching characteristics of HfO x /TiN capacitor structure is investigated. Switching parameters, including set and reset voltage v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8657ed921c41cfaf7f3a9cf8c3534482
https://doi.org/10.1016/j.surfcoat.2012.07.039
https://doi.org/10.1016/j.surfcoat.2012.07.039
Autor:
Chun Chih Kuo, Horng-Chih Lin, Heng Yuan Lee, Chia Wen Zhong, Kow-Ming Chang, Wen Hsien Tzeng, Feng-Yu Tsai, Ming Hong Tseng, Yi Chun Chan, Kou-Chen Liu, Pang-Shiu Chen, Frederick T. Chen, Ming Jinn Tsai
Publikováno v:
Thin Solid Films. 520:3415-3418
A transparent resistive random access memory used as Indium Tin Oxide (ITO) electrode, ITO/HfO2/Al2O3/…/HfO2/Al2O3/ITO capacitor structure is fabricated on glass substrate by atomic layer deposition. The unipolar resistive switching characteristics
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23b345f1dc3befd33115c707cf5ce0e0
https://doi.org/10.1016/j.tsf.2011.10.118
https://doi.org/10.1016/j.tsf.2011.10.118
Autor:
Ping Hung Yeh, Kow-Ming Chang, Ming Jinn Tsai, Frederick T. Chen, Wen Hsien Tzeng, Yun Ju Lee, Heng Yuan Lee, Kou-Chen Liu, Pang-Shiu Chen, Jiun Jie Huang
Publikováno v:
Thin Solid Films. 520:1246-1250
The pulsed laser deposition and growth of a high-k dielectric lanthanum aluminate LaAlO3 (LAO) thin film on indium tin oxide/glass substrate at different oxygen partial pressure was studied. Based on the pulsed laser deposition growth mechanism, we e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32e8303e5845a5b74c70f9e36880f0a9
https://doi.org/10.1016/j.tsf.2011.04.205
https://doi.org/10.1016/j.tsf.2011.04.205
Publikováno v:
Microelectronic Engineering. 88:1586-1589
A transparent resistive random access memory based on ITO/Gd"2O"3/ITO capacitor structure is fabricated on glass substrate. The transparent memory exhibits reliable resistive switching for more than 1000 cycles, low operation voltage of -2V/+2V, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6503e3763bbf89749ce00a72d34979d5
https://doi.org/10.1016/j.mee.2010.11.021
https://doi.org/10.1016/j.mee.2010.11.021
Publikováno v:
ECS Transactions. 35:137-144
The resistive switching (RS) behavior of the Ti/Gd2O3/Pt capacitor structure is fabricated and discussed in this paper. The switching characteristics operated under positive bias exhibits stable switching properties with a condensed voltage and resis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e04d92ef2305cc1ace2b646a7d2dbcb
https://doi.org/10.1149/1.3569906
https://doi.org/10.1149/1.3569906
Publikováno v:
Surface and Coatings Technology. 205:S379-S384
The electrical characteristics affected by plasma ions during resistive switching are investigated on an HfOx/TiN RRAM capacitor device. Experimental fabrications of the Pt electrode by e-beam evaporation, dc sputtering and stacked Pt electrode (evap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a643e40ec9ef36f868a4ae1dccf0c1c7
https://doi.org/10.1016/j.surfcoat.2010.08.043
https://doi.org/10.1016/j.surfcoat.2010.08.043
Publikováno v:
Thin Solid Films. 518:7460-7463
This paper studies the effect of ultraviolet (UV) light exposure on the resistive switching characteristics of an ITO/HfO x /TiN structure. Unstable and unreliable switching properties are generally observed on the ITO/HfO x /TiN sample. Under the ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::034a10500b5242319c93a46a6b919297
https://doi.org/10.1016/j.tsf.2010.05.024
https://doi.org/10.1016/j.tsf.2010.05.024
Publikováno v:
Microelectronics Reliability. 50:670-673
We successfully fabricated the Gd2O3 film for the application of resistive random access memory (RRAM). The resistive switching behavior of the Ti/Gd2O3/Pt capacitor structure could be both operated under positive or negative bias. However, there was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0095a673f29e88f14c467a9be2d57e1
https://doi.org/10.1016/j.microrel.2010.02.006
https://doi.org/10.1016/j.microrel.2010.02.006
Publikováno v:
ECS Transactions. 28:119-126
The effect of the top electrode on switching characteristics of a HfOx/TiN structure was investigated. From the electrical conduction analysis, the conduction mechanism between Pt and Ti was found to be quite different. A potential barrier formed in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c18952fc94b99c7f3a31e7e8738c30bb
https://doi.org/10.1149/1.3372569
https://doi.org/10.1149/1.3372569
Autor:
Jian-Hong Lin, Kow-Ming Chang, Bwo-Ning Chen, Heng-Hsin Wu, Jiun-Ming Kuo, Wen-Hsien Tzeng, Tzu-Li Wu
Publikováno v:
ECS Transactions. 11:91-100
As channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) is deeply scaled down, enhancing the carrier mobility in the channel is desired for improving the performance of complementary MOS (CMOS) circuit [1]. Enhanced device p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c18094f20a86bc57987ddd8b877df34
https://doi.org/10.1149/1.2912052
https://doi.org/10.1149/1.2912052