Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Wen Chien Yu"'
Publikováno v:
physica status solidi c. 5:2139-2141
Smoothly cleaved facets with high reflectivities have been demonstrated on GaN laser diodes after the devices were transferred onto GaAs substrates. The GaN based laser diode structure was first fabricated by metal organic chemical vapor deposition (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::370fbfac9828b4976bc322b8ce8c7650
https://doi.org/10.1002/pssc.200778478
https://doi.org/10.1002/pssc.200778478
Autor:
Wen chien-yu, 溫建育
101
Many methods can be applied to improve the operating performance of enterprises, but they may be constrained to partial improvements, and finally become symptomatic solutions. Dr. Goldratt’s Thinking Process helps the enterprises find out
Many methods can be applied to improve the operating performance of enterprises, but they may be constrained to partial improvements, and finally become symptomatic solutions. Dr. Goldratt’s Thinking Process helps the enterprises find out
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/6985ea
Autor:
Yu-Hsin Lin, Hung-Yu Chiu, Wen-Chien Yu, Jung Y. Huang, Fu-Liang Yang, Wen-Hsien Huang, Chang-Hong Shen, Hao-Chung Kuo, Jia-Min Shieh, Chih-Wei Hsu, Chao-Kei Wang, Bau-Tong Dai
Publikováno v:
Conference on Lasers and Electro-Optics 2010.
Record fabrication temperature, 100°C, of a single junction amorphous Si solar cell was demonstrated by a high-density plasma method. Present solar cell revealed conversion efficiency of 7.4% at 200°C (4.1% at 135°C).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b71d9efc5c0e19b7d612936994bc9931
https://doi.org/10.1364/cleo.2010.cmaa1
https://doi.org/10.1364/cleo.2010.cmaa1
Autor:
C-Ling Pan, Wen-Chien Yu, Chao-Kei Wang, Jung Y. Huang, Hao-Chung Kuo, Bau-Tong Dai, Jia-Min Shieh
Publikováno v:
Conference on Lasers and Electro-Optics/International Quantum Electronics Conference.
Fully Si-based MOSFET photodetector was demonstrated at optical telecommunication wavelengths by using a gate dielectric stack comprising of a Si quantum dots film. Illumination at wavelengths λ=1.55µm, photoresponse as high as 2.0A/W was measured.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee3a99247d6b0dd657d35216bc39ca8d
https://doi.org/10.1364/cleo.2009.cfk2
https://doi.org/10.1364/cleo.2009.cfk2
Autor:
Li-Jung Liu, Shich-Chuan Wu, Kuo-Chen Hsiang, Jia-Min Shieh, Lai Yi-Fan, Yen-Chang Chen, Chao-Kei Wang, Jui-Chung Shiao, Wen-Chien Yu, Shia-Chia Liu, Hao-Chung Kuo
Publikováno v:
2008 8th IEEE Conference on Nanotechnology.
Mesoporus silica dielectrics, which revealed low refractive index (n~1.26), were introduced together with Si3N4 layers to be double-layer-based graded-refractive-index anti- reflectors for silicon solar-cells. Enhanced solar-light transmission increa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba49b02ba29ee5e64810ce4b03f2778d
https://doi.org/10.1109/nano.2008.26
https://doi.org/10.1109/nano.2008.26
Autor:
Jia-Min Shieh, Hao-Chung Kuo, Lai Yi-Fan, Shia-Chia Liu, Chao-Kei Wang, Shich-Chuan Wu, Wen-Chien Yu, Yen-Chang Chen, Kuo-Chen Hsiang
Publikováno v:
2008 IEEE Silicon Nanoelectronics Workshop.
Mesoporus silica dielectrics, which revealed low refractive index (n~1.26), were introduced together with Si3N4 layers to be double-layer-based graded-refractive-index ant-reflectors for silicon solar-cells. Enhanced solar-light transmission increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0032d84c877b18bc05f018b584a11163
https://doi.org/10.1109/snw.2008.5418406
https://doi.org/10.1109/snw.2008.5418406
Autor:
Wen-Chien Yu, 游文謙
95
Smoothly cleaved facets with high reflectivities have been demonstrated on GaN laser diodes after the devices were transferred onto GaAs substrates. The GaN based laser diode structure was first fabricated by metal organic chemical vapor depo
Smoothly cleaved facets with high reflectivities have been demonstrated on GaN laser diodes after the devices were transferred onto GaAs substrates. The GaN based laser diode structure was first fabricated by metal organic chemical vapor depo
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/85145511657750186359
Autor:
An Thung Cho, Jia-Min Shieh, Wen-Hsien Huang, Wen Chien Yu, Chao Kei Wang, Hao-Chung Kuo, Jung Y. Huang, Jian Da Huang, Ching Wei Chen, Ci-Ling Pan, Fu-Liang Yang, Bau Tong Dai, Yi-Chao Wang
Publikováno v:
Applied Physics Letters. 95:143501
We show an artificially engineered electret with Si nanocrystals embedded in mesoporous silica for nonvolatile memory. We attribute the polarization to from polar layers lying at the interfaces between one-side bonded Si nanocrystals and mesoporous s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5496df82c92caae4f5b0df7651ca3858
https://doi.org/10.1063/1.3240888
https://doi.org/10.1063/1.3240888
Autor:
Bau Tong Dai, Jung Y. Huang, Huang Yan Jhan, Jia-Min Shieh, Fu-Liang Yang, Chao Kei Wang, Ci-Ling Pan, Chih-Wei Hsu, Wen Chien Yu, Hao-Chung Kuo
Publikováno v:
Applied Physics Letters. 94:241108
A fully silicon-based metal-oxide-semiconductor field-effect transistor is demonstrated for the detection of near-infrared light. Si nanocrystals (nc-Si) are synthesized in the nanopore channels of mesoporous silica (MS) inserted between two oxide la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1e05578bfce2512879eed0785e9d840
https://doi.org/10.1063/1.3156806
https://doi.org/10.1063/1.3156806
Autor:
Jia-Min Shieh, Li-Jung Liu, Jui-Chung Shiao, Chao-Kei Wang, Shich-Chuan Wu, Wen-Chien Yu, Hao-Chung Kuo, Shia-Chia Liu, Yi-Fan Lai, Kuo-Chen Hsiang, Yen-Chang Chen
Publikováno v:
2008 8th IEEE Conference on Nanotechnology; 2008, p63-66, 4p