Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Wen Chian Lai"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 66:1635-1643
This paper presents the design of a V-band logarithmic power detector (PD) and the integration with a 60-GHz CMOS vital-signs Doppler radar sensor to be incorporated with a microprocessor control unit (MCU) for fast automatic clutter cancellation. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e38de7137d15effeb496b3f27c43320
https://doi.org/10.1109/tmtt.2017.2777467
https://doi.org/10.1109/tmtt.2017.2777467
Publikováno v:
Microwave and Optical Technology Letters. 58:2725-2731
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::207e089aa13498e116885b5b63fb627a
https://doi.org/10.1002/mop.30137
https://doi.org/10.1002/mop.30137
Publikováno v:
IEEE Microwave and Wireless Components Letters. 27:488-490
In this letter, a 75–110-GHz W-band high-linearity traveling-wave single-pole-double-throw switch in 90-nm CMOS GUTM 1P9M is presented. Compared with the traditional traveling-wave switch with negative body-biasing technique, the proposed design ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f581686cdaeed600870423e373b320d4
https://doi.org/10.1109/lmwc.2017.2690837
https://doi.org/10.1109/lmwc.2017.2690837
Publikováno v:
2017 IEEE MTT-S International Microwave Symposium (IMS).
This paper presents a V-Band logarithmic power detector fabricated in 90-nm CMOS technology. The topology of successive detection logarithmic amplifier (SDLA) is adopted for high dynamic range. Instead of using traditional differential limiting ampli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a541737a8f94b26ec5f5543adbd8e3e
https://doi.org/10.1109/mwsym.2017.8058651
https://doi.org/10.1109/mwsym.2017.8058651
Publikováno v:
2015 European Microwave Conference (EuMC).
This paper presents a W-band CMOS SPDT high isolation T/R switch fabricated in 90nm CMOS. The switch is designed by using series-shunt structure with body-floating technique to improve the insertion loss and linearity. To achieve high-isolation perfo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0c1c4ba67ca672b383c03f0d22ffcba
https://doi.org/10.1109/eumc.2015.7345956
https://doi.org/10.1109/eumc.2015.7345956
Autor:
Wen-Chian Lai, Chuang, Huey-Ru
Publikováno v:
2015 IEEE MTT-S International Microwave Symposium; 2015, p1-3, 3p