Zobrazeno 1 - 10
of 63
pro vyhledávání: '"Wen−an Loong"'
Publikováno v:
Japanese Journal of Applied Physics. 46:105-110
The applications of a high-transmittance embedded layer (HTEL) (T=15–35%) in an attenuated phase-shifting mask were studied by simulation with the aid of Taguchi design of experiment. A modified transmittance control mask with HTEL was proven to be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bad7571a5622d04312f790a0a3ba88aa
https://doi.org/10.1143/jjap.46.105
https://doi.org/10.1143/jjap.46.105
Publikováno v:
Japanese Journal of Applied Physics. 45:6216-6224
Simulations for the optimization of the mask error enhancement factor (MEEF) by using Taguchi's design of experiment (DOE) method in both dry and immersion ArF lithography have been demonstrated here. By DOE, MEEF has been successfully reduced, and t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bcccc5ca3756f462c47df2e1593f89a
https://doi.org/10.1143/jjap.45.6216
https://doi.org/10.1143/jjap.45.6216
Autor:
Kwei-Tin Yeh, Wen-an Loong
Publikováno v:
Japanese Journal of Applied Physics. 45:2481-2496
In general, better resolution and lower mask error enhancement factor (MEEF) are obtained when a higher numerical aperture (NA) is used. However, simulations in this study show that, if Y-polarized light and off-axis illuminations were used, higher N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bfba69ba6bd49256f9da44e961b4989
https://doi.org/10.1143/jjap.45.2481
https://doi.org/10.1143/jjap.45.2481
Publikováno v:
Japanese Journal of Applied Physics. 45:1566-1569
Because the surface roughness of a thin film will cause light scattering, the reflectance (R) and transmittance (T) measured using a UV/visible (vis) spectrometer become lower than the actual values. The deviation becomes larger with increasing rough
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a5729f915d0c4288898529ec54e5156
https://doi.org/10.1143/jjap.45.1566
https://doi.org/10.1143/jjap.45.1566
Autor:
Wen-an Loong, Cheng-ming Lin
Publikováno v:
Japanese Journal of Applied Physics. 41:4037-4041
When the compositions of Al2O3, SiO2 and other oxides were increased, refractive index (n) appeared to increase and extinction coefficient (k) to decrease in AlSixOy. The study of the correlation among sputtering conditions, chemical compositions and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d4dd9988ec3372dd9ce214357b4329e
https://doi.org/10.1143/jjap.41.4037
https://doi.org/10.1143/jjap.41.4037
Autor:
Wen-an Loong, Cheng-ming Lin
Publikováno v:
Microelectronic Engineering. :41-48
In contrast to the normal transmittance (T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c75c520235dc532620dd90687827890c
https://doi.org/10.1016/s0167-9317(01)00532-9
https://doi.org/10.1016/s0167-9317(01)00532-9
Publikováno v:
Microelectronic Engineering. :481-487
We reported that the optical and physical properties of TiSi x N y thin films formed by sputtering are suitable to be used as an embedded layer in 193 nm. The TiSi x N y films were deposited under DC power of Ti target 170–220 W, RF power of Si tar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::223d03b6a602fdde2f8a06f1115b4549
https://doi.org/10.1016/s0167-9317(01)00540-8
https://doi.org/10.1016/s0167-9317(01)00540-8
Autor:
Wen-an Loong, Cheng-ming Lin
Publikováno v:
Microelectronic Engineering. 53:133-136
AlSi"xN"y (x~0.31, y~0.45) thin film as a new embedded material for AttPSM in 193 nm lithography was presented. With the good controlling of plasma sputtering of Al (100~130 W) and Si (20~50 W) under Ar (75 sccm), and nitrogen (2.5~5 sccm), AlSi"xN"y
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2f202cf6f8ad940ea600b83092a39437
https://doi.org/10.1016/s0167-9317(00)00280-x
https://doi.org/10.1016/s0167-9317(00)00280-x
Autor:
Wen-an Loong, Cheng-ming Lin
Publikováno v:
Microelectronic Engineering. 46:93-96
TiSi"xN"y and TiSi"xO"yN"z were presented as new embedded materials for APSM in 193 nm lithography. TiSi"xN"y films were formed by plasma sputtering of Ti (180~230 W) and Si (60~80 W) under Ar (50 sccm) and nitrogen (4~6 sccm). For required phase shi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb612dd48a3895693dee9926264ccf12
https://doi.org/10.1016/s0167-9317(99)00023-4
https://doi.org/10.1016/s0167-9317(99)00023-4
Publikováno v:
Microelectronic Engineering. :125-128
TiSi x O y as an absorptive shifter (embedded layer) for attenuated phase-shifting mask (APSM) in 248 nm wavelength is presented. TiSi x O y thin film was formed by plasma sputtering of Ti (25∼55 W) and Si (200∼250 W) under Ar (30 sccm) and oxyge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac0368851a4db0e8bcdba05a7e123152
https://doi.org/10.1016/s0167-9317(98)00027-6
https://doi.org/10.1016/s0167-9317(98)00027-6