Zobrazeno 1 - 10
of 243
pro vyhledávání: '"Wen‐Shiung Lour"'
Publikováno v:
Electronics Letters, Vol 58, Iss 22, Pp 837-839 (2022)
Abstract A hydrogen sensing transistor fabricated by a heterojunction bipolar transistor (HBT) with an extended base (EB) formed by a metal–semiconductor–metal (MSM) hydrogen sensor is reported. The power consumption in stand‐by mode is smaller
Externí odkaz:
https://doaj.org/article/ed7fffe636d64268b00ca5510be8a917
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 92-98 (2020)
Detective properties of a GaAs-based position sensitive detector (PSD) employing a very thin, highly doped p±-GaAs layer as a resistive layer were investigated. In addition to photovoltaic voltages, photovoltaic currents from a three-terminal PSD wi
Externí odkaz:
https://doaj.org/article/66b5a63328544be3bac8b5d9d4bea824
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 1047-1054 (2019)
Nondestructive methods determining current mismatched ratios (CMMRs) between key subcells in a multijunction solar cell were proposed in view of a compensated concept of subcell's current. Various compensated lights were employed to determine key CMM
Externí odkaz:
https://doaj.org/article/7f26c769d05a4397a2dd5673b1d917c6
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 170-170 (2020)
In [1], the revised date was incorrect. It should be as follows:“revised 4 December 2019”
Externí odkaz:
https://doaj.org/article/e7798459892445ca9941c3001e8f1a23
Publikováno v:
International Journal of Hydrogen Energy. 47:39276-39287
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5c6080c9f4f210962eb8a73930c3a30c
https://doi.org/10.1016/j.ijhydene.2022.09.082
https://doi.org/10.1016/j.ijhydene.2022.09.082
A hydrogen sensing transistor fabricated by a heterojunction bipolar transistor (HBT) with an extended base (EB) formed by a metal-semiconductor-metal (MSM) hydrogen sensor is reported. The power consumption in stand-by mode is smaller than 2 μW. Co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::648ebb7dec5a186755be7892d633ccd8
https://doi.org/10.22541/au.165703707.77319853/v1
https://doi.org/10.22541/au.165703707.77319853/v1
Autor:
Jung-Hui Tsai, Yue-Chang Lin, Jing-Shiuan Niu, Wen-Shiung Lour, Wen-Chau Liu, Ching-Hong Chang
Publikováno v:
Science of Advanced Materials. 13:30-35
In this work, an AlGaN/GaN enhancement-mode high electron mobility transistor (HEMT) with two-step gate recess and electroless plating (EP) approaches is reported. Scanning electron microscopy and atomic force microscopy surface analysis are used to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a35108c309fac8e56df50fd54e8ea80c
https://doi.org/10.1166/sam.2021.3823
https://doi.org/10.1166/sam.2021.3823
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 92-98 (2020)
Detective properties of a GaAs-based position sensitive detector (PSD) employing a very thin, highly doped p±-GaAs layer as a resistive layer were investigated. In addition to photovoltaic voltages, photovoltaic currents from a three-terminal PSD wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e658e0336fd61fc77b8125ba23104700
https://doi.org/10.1109/jeds.2020.2965200
https://doi.org/10.1109/jeds.2020.2965200
Publikováno v:
SSRN Electronic Journal.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ef03e2c241d7ec0e283a66eb470176b
https://doi.org/10.2139/ssrn.4179007
https://doi.org/10.2139/ssrn.4179007
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q211-Q216
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65ea2665439bb2ce3a338c82645c4c84
https://doi.org/10.1149/2.0221910jss
https://doi.org/10.1149/2.0221910jss