Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Welser, R. E."'
Publikováno v:
Journal of Applied Physics; Mar2008, Vol. 103 Issue 6, p064318, 4p, 1 Diagram, 4 Graphs
Publikováno v:
Rehder, E. M. ; Cismaru, C. ; Zampardi, P. J. ; Welser, R. E. (2005) Novel base doping profile for improved speed and power. In: Gallium Arsenide applications symposium. GAAS 2005, 3-7 ottobre 2005, Parigi.
We have experimentally studied the effect of twonewbase doping profiles on the base transit time of a GaAs npn heterojunction bipolar transistor. The doping in a region close to the collector is reduced either by a doping grade or a stepwise reductio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d433cc031dcb5a98c1101cc070a81996
http://amsacta.unibo.it/1327/
http://amsacta.unibo.it/1327/
Publikováno v:
Deluca, P.M. ; Landini, B.E. ; Welser, R. E. (2001) Carbon Doped InP/InGaAs Heterojunction Bipolar Transistors Grown By MOCVD. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
InGaAs/InP heterojunction bipolar transistors grown in a multi-wafer metal-organic chemicalvapor deposition system will be demonstrated.Excellent large and small area DC and RF results are obtained for single and double heterojunction structures. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c506e062890c3e08499e4d260e141c30
Autor:
Stevens, K.S., Welser, R. E., Deluca, P.M., Landini, B. E., Lutz, C. R., Wolfsdorf-Brenner, T. L.
Publikováno v:
Stevens, K.S. ; Welser, R. E. ; Deluca, P.M. ; Landini, B. E. ; Lutz, C. R. ; Wolfsdorf-Brenner, T. L. (2001) Enhanced Performance GaAs-Based HBTs using a GaInNAs Base Layer. In: Gallium Arsenide applications symposium. Gaas 2001, 24-28 September 2001, London.
GaInNAs base layers are enabling performance enhancements over standard GaAs-based HBTs, while preserving the cost effective GaAs platform. We have demonstrated InGaP/GaInNAs HBTs which offer 115 mV lower operating voltage, improved diode symmetry fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72f25827619e6f1ed494013b71c52137
Publikováno v:
Journal of Physics: Condensed Matter; 8/11/2004, Vol. 16 Issue 31, pS3373-S3385, 13p
Autor:
LeVan, Paul D., Sood, Ashok K., Wijewarnasuriya, Priyalal S., D'Souza, Arvind I., Tian, Z.-B., DeCuir, E. A., Gautam, N., Krishna, S., Wijewarnasuriya, P. S., Pattison, J. W., Dhar, N., Welser, R. E., Sood, A. K.
Publikováno v:
Proceedings of SPIE; September 2013, Vol. 8868 Issue: 1 p88680L-88680L-9, 798130p
Autor:
Amman, M., Sleight, J. W., Lombardi, D. R., Welser, R. E., Deshpande, M. R., Reed, M. A., Guido, L. J.
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Microelectronics & Nanometer Structures; 1996, Vol. 14 Issue 1, p54-62, 9p
Akademický článek
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Publikováno v:
Semiconductor Science & Technology; Aug2002, Vol. 17 Issue 8, p1-1, 1p
Autor:
Welser, R. E., Guido, L. J.
Publikováno v:
Solar Energy Materials & Solar Cells. Apr1995, Vol. 36 Issue 4, p349. 0p.