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pro vyhledávání: '"Welander, Paul B."'
Autor:
Welander, Paul B., Bolkhovsky, Vladimir, Weir, Terence J., Gouker, Mark A., Oliver, William D.
This letter describes a new inorganic shadow mask that has been employed for the evaporation of all-epitaxial Al/Al2O3/Al superconducting tunnel junctions. Organic resists that are commonly used for shadow masks and other lift-off processes are not c
Externí odkaz:
http://arxiv.org/abs/1203.6007
Autor:
Gustavsson, Simon, Bylander, Jonas, Yan, Fei, Forn-Díaz, Pol, Bolkhovsky, Vlad, Braje, Danielle, Fitch, George, Harrabi, Khalil, Lennon, Donna, Miloshi, Jovi, Murphy, Peter, Slattery, Rick, Spector, Steven, Turek, Ben, Weir, Terry, Welander, Paul B., Yoshihara, Fumiki, Cory, David G., Nakamura, Yasunobu, Orlando, Terry P., Oliver, William D.
Publikováno v:
Phys. Rev. Lett. 108, 170503 (2012)
We have investigated the driven dynamics of a superconducting flux qubit that is tunably coupled to a microwave resonator. We find that the qubit experiences an oscillating field mediated by off-resonant driving of the resonator, leading to strong mo
Externí odkaz:
http://arxiv.org/abs/1201.6341
Autor:
Welander, Paul B.
In their recent publication, Zhao et al. [J. Appl. Phys. 110, 033523 (2011)] claim to have found a new three-dimensional relationship for niobium-on-sapphire epitaxy. However, two critical errors were made in the analysis of x-ray diffraction measure
Externí odkaz:
http://arxiv.org/abs/1112.3287
Autor:
Sage, Jeremy M., Bolkhovsky, Vladimir, Oliver, William D., Turek, Benjamin, Welander, Paul B.
Publikováno v:
J. Appl. Phys. 109, 063915 (2011)
Superconducting coplanar waveguide (SCPW) resonators have a wide range of applications due to the combination of their planar geometry and high quality factors relative to normal metals. However, their performance is sensitive to both the details of
Externí odkaz:
http://arxiv.org/abs/1010.6063
Autor:
Welander, Paul B.
Publikováno v:
J. Appl. Phys. 108, 103508 (2010)
The heteroepitaxial growth of Re (0001) films on Nb (110) surfaces has been investigated. Nb/Re bilayers were grown on A-plane sapphire -- alpha-Al2O3 (11-20) -- by molecular beam epitaxy. While Re grew with a (0001) surface, the in-plane epitaxial r
Externí odkaz:
http://arxiv.org/abs/1008.4577
Publikováno v:
Appl. Phys. Lett. 97, 233510 (2010)
Josephson junctions were fabricated using two different methods of barrier formation. The trilayers employed were Nb/Al-AlOx/Nb on sapphire, where the first two layers were epitaxial. The oxide barrier was formed either by exposing the Al surface to
Externí odkaz:
http://arxiv.org/abs/0812.3636
Autor:
Welander, Paul B., Eckstein, James N.
We report on the layer-by-layer growth of single-crystal Al2O3 thin-films on Nb (110). Single-crystal Nb films are first prepared on A-plane sapphire, followed by the evaporation of Al in an O2 background. The first stages of Al2O3 growth are layer-b
Externí odkaz:
http://arxiv.org/abs/0704.0118
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Autor:
Sage, Jeremy M., Bolkhovsky, Vladimir, Oliver, William D., Turek, Benjamin, Welander, Paul B.
Publikováno v:
Journal of Applied Physics; Mar2011, Vol. 109 Issue 6, p063915, 10p, 1 Black and White Photograph, 1 Chart, 4 Graphs
Akademický článek
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