Zobrazeno 1 - 10
of 153
pro vyhledávání: '"Weizong Xu"'
Autor:
Jianhong Zhang, Zesen Liu, Jiandong Ye, Weizong Xu, Feng Zhou, Dong Zhou, Rong Zhang, Fangfang Ren, Hai Lu
Publikováno v:
IEEE Photonics Journal, Vol 16, Iss 3, Pp 1-5 (2024)
Terahertz (THz) communication is a rapidly advancing field with applications spanning space exploration, wireless communication, and security checks. Achieving effective intensity modulation of THz radiation is a crucial requirement for THz technolog
Externí odkaz:
https://doaj.org/article/e5c080ef39994dafb6d31b4d7365b980
Publikováno v:
Micromachines, Vol 15, Iss 4, p 512 (2024)
In this study, the electrical performance and bias stability of InSnO/a-InGaZnO (ITO/a-IGZO) heterojunction thin-film transistors (TFTs) are investigated. Compared to a-IGZO TFTs, the mobility (µFE) and bias stability of ITO/a-IGZO heterojunction TF
Externí odkaz:
https://doaj.org/article/6641f13d879d487e9b5460913ef64d5a
Autor:
Qi Wei, Feng Zhou, Weizong Xu, Fangfang Ren, Dong Zhou, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 1003-1008 (2022)
In this letter, we have successfully transferred the 4-inch crack-free GaN films from sapphire substrate to conductive silicon wafer by employing eutectic bonding and laser lift-off (LLO) techniques. The resultant 1-mm2 fully-vertical GaN Schottky ba
Externí odkaz:
https://doaj.org/article/cbc99389fd8842528fe10a3a2fcac2de
Publikováno v:
Micromachines, Vol 14, Iss 4, p 842 (2023)
In this work, an electrical stability model based on surface potential is presented for amorphous In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) under positive-gate-bias stress (PBS) and light stress. In this model, the sub-gap density of states (D
Externí odkaz:
https://doaj.org/article/813ea48927234071a3333592dcf851cb
Autor:
Heng Zhang, Linlin Su, Dong Zhou, Weizong Xu, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 6, Pp 1-8 (2019)
Optical crosstalk is one of major problems limiting the performance of focal plane arrays based on single photon avalanche diodes (SPADs). In this work, for the first time the crosstalk characteristics of a 4H-SiC SPAD linear array are studied, which
Externí odkaz:
https://doaj.org/article/bde2f959772640d395e2f499f4bbd2de
Publikováno v:
Micromachines, Vol 13, Iss 4, p 617 (2022)
In this work, the impact of nitrogen doping (N-doping) on the distribution of sub-gap states in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) is qualitatively analyzed by technology computer-aided design (TCAD) simulation. According to the
Externí odkaz:
https://doaj.org/article/610a16b6a128455a89d7cc316558a26f
Autor:
Sen Yang, Dong Zhou, Weizong Xu, Xiaolong Cai, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, Youdou Zheng
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 2, Pp 1-8 (2017)
In this paper, 4H-SiC separated absorption charge and multiplication ultraviolet avalanche photodiodes (APDs) with small gain-voltage slope and enhanced fill factor are designed and fabricated. As a special reach-through structure, the absorption lay
Externí odkaz:
https://doaj.org/article/33070fd3325e4a20bd9186dd4b6a3bb9
Publikováno v:
Applied Sciences, Vol 9, Iss 9, p 1880 (2019)
The electrical characteristics of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) deposited with different N2/O2 partial pressure ratios (PN/O) are investigated. It is found that the device with 20% PN/O exhibits enhanced electrical stability
Externí odkaz:
https://doaj.org/article/de35b39d848e4081ba46e9057fb9c0c4
Autor:
Yifu Wang, Wenxin Li, Dong Zhou, Weizong Xu, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Publikováno v:
IEEE Transactions on Electron Devices. 70:159-166
Autor:
Qunsi Yang, Qing Liu, Lijian Guo, Shucai Hao, Dong Zhou, Weizong Xu, Baoqiang Zhang, Fan Yang, Fangfang Ren, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Publikováno v:
IEEE Electron Device Letters. 43:2161-2164