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pro vyhledávání: '"WeiweiXie"'
Autor:
Liu, Yiyuan, Liu, Yu-Fei, Gui, Xin, Xiang, Cheng, Zhou, Hui-bin, Hsu, Chuang-Han, HsinLin, Tay-RongChang, WeiweiXie, ShuangJia
Topological electrons in semimetals are usually vulnerable to chemical doping and environment change, which restricts their potential application in future electronic devices. In this paper we report that the type-II Dirac semimetal $\mathbf{VAl_3}$
Externí odkaz:
http://arxiv.org/abs/2005.07970
