Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Weiran Kong"'
Autor:
Hualun Chen, Zhaozhao Xu, Yu Chen, Mingxu Fang, Li Wang, Li Xiao, Yuanyuan Qian, Wan Song, Tian Tian, Ziquan Fang, Donghua Liu, Wensheng Qian, Weiran Kong
Publikováno v:
2022 China Semiconductor Technology International Conference (CSTIC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4523a486f79564dff67e7de6f9c55131
https://doi.org/10.1109/cstic55103.2022.9856732
https://doi.org/10.1109/cstic55103.2022.9856732
Autor:
Jun Hu, Shichang Zou, Wei Yue, Duan Wenting, Xinjie Yang, Qian Wensheng, Ziquan Fang, Weiran Kong, Zhaozhao Xu, Feng Jin, Donghua Liu
Publikováno v:
Microelectronics Journal. 88:29-36
Shallow Trench Isolation (STI) and Stepped Oxide (SO) -based N-type LDMOS are simultaneously studied for the first time for low-voltage power device in this paper. Ultra-low specific on-resistance (Rsp) can be obtained in both STI- and SO-based LDMOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d24a4b8545f8ff49c98aeb546a87f44d
https://doi.org/10.1016/j.mejo.2019.04.011
https://doi.org/10.1016/j.mejo.2019.04.011
Publikováno v:
Solid-State Electronics. 152:46-52
A triple self-aligned 2-bit/cell split-gate flash cell with a common select-gate (SG) for 2-bit is produced at 90-nm technology node. In this paper, scaling considerations of this novel split-gate flash are discussed. Firstly, SG-channel length scali
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41ea7eb05d04991a23764467f9facd4d
https://doi.org/10.1016/j.sse.2018.12.006
https://doi.org/10.1016/j.sse.2018.12.006
Autor:
Hualun Chen, Zhaozhao Xu, Wei Xiong, Jian Zhang, Xiaojun Xu, Hui Wang, Yang Dang, Jinfeng Wang, Wan Song, Tian Tian, Donghua Liu, Wensheng Qian, Weiran Kong
Publikováno v:
Solid-State Electronics. 194:108316
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a3a3ea437d12969216a80a738cd244c
https://doi.org/10.1016/j.sse.2022.108316
https://doi.org/10.1016/j.sse.2022.108316
Autor:
Jun Hu, Duan Wenting, Hualun Chen, Donghua Liu, Wei Xiong, Wensheng Qian, Shichang Zou, Weiran Kong, Zhaozhao Xu
Publikováno v:
Microelectronics Reliability. 84:157-162
In this paper, we elaborated non-localized drain disturb (DD) in the normally-on silicon-oxide-nitride-oxide‑silicon (SONOS) flash device by experiments and simulations. It was found that a peak value of vertical tunneling oxide (TO) E-Field at cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55c8543a8950299c10208477fbf59ecb
https://doi.org/10.1016/j.microrel.2018.03.039
https://doi.org/10.1016/j.microrel.2018.03.039
Autor:
Weiran Kong, Zhaozhao Xu, Donghua Liu, Wei Xiong, Jun Hu, Shichang Zou, Wensheng Qian, Hualun Chen, Duan Wenting, Wei Na
Publikováno v:
Solid-State Electronics. 129:44-51
The mechanism and distribution of drain disturb (DD) are investigated in silicon-oxide-nitride-oxide-silicon (SONOS) flash cells. It is shown that DD is the only concern in this paper. First, the distribution of trapped charge in nitride layer is fou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5995f17796edba55ea445a056bb978a7
https://doi.org/10.1016/j.sse.2016.12.010
https://doi.org/10.1016/j.sse.2016.12.010
Publikováno v:
Microelectronics Reliability. 68:51-56
The intrinsic read disturb mechanism in split-gate memory cells has been studied based on large amounts of experimental data and simulation results of 0.11 μm NOR SuperFlash® technology memory cells. It is shown that non-planar Floating Gate (FG) s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53d1d272f34dfb0dff8b989323c82778
https://doi.org/10.1016/j.microrel.2016.11.009
https://doi.org/10.1016/j.microrel.2016.11.009
Autor:
Yiran Xu, Jiangchuan Ren, Dianpeng Lin, Jun Xiao, Weiran Kong, Wenyi Zhu, Shichang Zou, Jianwei Jiang
Publikováno v:
Electronics Letters. 54:554-556
This Letter proposes a low-cost, single event double-upset tolerant latch which utilises interlocked nodes to keep data, clock gating (CG) in Muller C-element (MCE) to turn off the storage cell, a three-input MCE to block the soft error from the stor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::687ab74033245d1e08b103c82961d78b
https://doi.org/10.1049/el.2018.0558
https://doi.org/10.1049/el.2018.0558
Autor:
Jiang Hong, Bo Zhang, Guangjun Yang, Xiang Qiu, Wang Zhexian, Shifan Gao, Gao Chao, Cheng Zhang, Choonghyun Lee, Jun Xiao, Weiran Kong, Binhan Li, Chun Yang, Yi Zhao, Jian Hu
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this work, a new type of flash memory-based memristor, named programmable linear random-access memory (PLRAM), is presented to store analog synaptic weights in a single flash memory cell. A PLRAM cell with a self-calibrating program/erase scheme c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7c6ffb076153c7ac3510e4edb493b73
https://doi.org/10.1109/iedm19573.2019.8993598
https://doi.org/10.1109/iedm19573.2019.8993598
Autor:
Lu Yi, Li Hao, Pan Jia, Xing Junjun, Zhang Xukun, Zhao Longjie, Huang Xuan, Weiran Kong, Yang Jiye, Chen Chong
Publikováno v:
2019 8th International Symposium on Next Generation Electronics (ISNE).
In this paper we present a Superjunction IGBT (Super-IGBT) based upon Deep Trench (DT) Superjunciton technology to cope with high current density, smaller chip size and low switch losses. The current density of Super-IGBT is 550A/cm2(CP test:20A@1.8V
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::085395c08b1d855d752a8b0d359d2ceb
https://doi.org/10.1109/isne.2019.8896683
https://doi.org/10.1109/isne.2019.8896683