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of 142
pro vyhledávání: '"Weinstein, Dana"'
CMOS-MEMS resonators seamlessly integrated in advanced integrated circuit (IC) technology have the unique capability to enable unprecedented integration of stable frequency references, acoustic spectral processors, and physical sensors. Demonstration
Externí odkaz:
http://arxiv.org/abs/2304.05975
This paper presents a comprehensive study of the performance of Sezawa surface acoustic wave (SAW) devices in SweGaN QuanFINE ultrathin GaN/SiC platform, reaching frequencies above 14 GHz for the first time. Sezawa mode frequency scaling is achieved
Externí odkaz:
http://arxiv.org/abs/2204.12113
In this work, a compact model is presented for a 14 nm CMOS-based FinFET Resonant Body Transistor (fRBT) operating at a frequency of 11.8 GHz and targeting RF frequency generation/filtering for next generation radio communication, clocking, and sensi
Externí odkaz:
http://arxiv.org/abs/2107.04502
Autor:
Srivastava, Abhishek, Chatterjee, Baibhab, Rawat, Udit, He, Yanbo, Weinstein, Dana, Sen, Shreyas
(RFT) allows very high-Q active mode resonators, promising crystal-less monolithic clock generation for mmWave systems. However, there is a strong need for design of mmWave oscillators that utilize the high-Q of active-mode RFT (AM-RFT) optimally, wh
Externí odkaz:
http://arxiv.org/abs/2107.01953
Here we present the first demonstration and in-depth study of unreleased acoustic resonators in 14nm FinFET technology in the IEEE X band, which offer a zero-barrier-to-entry solution for high Q, small footprint, resonant tanks integrated seamlessly
Externí odkaz:
http://arxiv.org/abs/2107.00608
Autor:
Srivastava, Abhishek, Chatterjee, Baibhab, Rawat, Udit, He, Yanbo, Weinstein, Dana, Sen, Shreyas
Very small electromechanical coupling coefficient in micro-electromechanical systems (MEMS) or acoustic resonators is quite of a concern for oscillator performance, specially at mmWave frequencies. This small coefficient is the manifestation of the s
Externí odkaz:
http://arxiv.org/abs/2005.07138
This paper introduces the first tunable ferroelectric capacitor (FeCAP) based unreleased RF MEMS resonator, integrated seamlessly in Texas Instruments' 130nm Ferroelectric RAM (FeRAM) technology. An array of FeCAPs in this complementary metal-oxide-s
Externí odkaz:
http://arxiv.org/abs/1905.05903
Autor:
Ramadoss, Koushik, Zuo, Fan, Sun, Yifei, Zhang, Zhen, Lin, Jianqiang, Bhaskar, Umesh, Shin, SangHoon, Alam, Muhammad Ashraful, Guha, Supratik, Weinstein, Dana, Ramanathan, Shriram
We demonstrate memory devices based on proton doping and re-distribution in perovskite nickelates (RNiO3, {R=Sm,Nd}) that undergo filling-controlled Mott transition. Switching speeds as high as 30 ns in two-terminal devices patterned by electron-beam
Externí odkaz:
http://arxiv.org/abs/1805.00527
Autor:
Weinstein, Dana
Publikováno v:
Connect to full text. Access to electronic version of some theses may be restricted..
Thesis (Ph.D.)--Cornell University, August, 2009.
Includes bibliographical references.
Includes bibliographical references.
Externí odkaz:
http://hdl.handle.net/1813/14010
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