Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Weiliang Jing"'
Autor:
Xinlv Duan, Kailiang Huang, Junxiao Feng, Shihui Yin, Zhaogui Wang, Guangfan Jiao, Ying Wu, Weiliang Jing, Zhengbo Wang, Jingyu Li, Jeffrey Xu, Chuanke Chen, Qian Chen, Xichen Chuai, Congyan Lu, Guanhua Yang, Di Geng, Ling Li, Ming Liu
Publikováno v:
SID Symposium Digest of Technical Papers. 53:318-321
Autor:
Xinlv Duan, Kailiang Huang, Junxiao Feng, Jiebin Niu, Haibo Qin, Shihui Yin, Guangfan Jiao, Daniele Leonelli, Xiaoxuan Zhao, Zhaogui Wang, Weiliang Jing, Zhengbo Wang, Ying Wu, Jeffrey Xu, Qian Chen, Xichen Chuai, Congyan Lu, Wenwu Wang, Guanhua Yang, Di Geng, Ling Li, Ming Liu
Publikováno v:
IEEE Transactions on Electron Devices. 69:2196-2202
Autor:
Kailiang Huang, Xinlv Duan, Junxiao Feng, Ying Sun, Congyan Lu, Chuanke Chen, Guangfan Jiao, Xinpeng Lin, Jinhai Shao, Shihui Yin, Jiazhen Sheng, Zhaogui Wang, Wenqiang Zhang, Xichen Chuai, Jiebin Niu, Wenwu Wang, Ying Wu, Weiliang Jing, Zhengbo Wang, Jeffrey Xu, Guanhua Yang, Di Geng, Ling Li, Ming Liu
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Autor:
Jingrui Guo, Ying Sun, Lingfei Wang, Xinlv Duan, Kailiang Huang, Zhaogui Wang, Junxiao Feng, Qian Chen, Shijie Huang, Lihua Xu, Di Geng, Guangfan Jiao, Shihui Yin, Zhengbo Wang, Weiliang Jing, Ling Li, Ming Liu
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Autor:
Xinlv Duan, Kailiang Huang, Junxiao Feng, Jiebin Niu, Haibo Qin, Shihui Yin, Guangfan Jiao, Daniele Leonelli, Xiaoxuan Zhao, Weiliang Jing, Zhengbo Wang, Qian Chen, Xichen Chuai, Congyan Lu, Wenwu Wang, Guanhua Yang, Di Geng, Ling Li, Ming Liu
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Publikováno v:
Computers & Electrical Engineering. 74:47-58
In this paper, we propose a subsystem architecture under 3D-Storage Class Memory (3D-SCM), termed SuS, to solve the memory and power wall problems. Placing the processing unit under the 3D-SCM achieves high performance. We evaluate SuS using gem5 and
Autor:
Kai Yang, Yong Ye, Beom-seop Lee, Yuan Du, Weiliang Jing, Yinyin Lin, Bomy Chen, Sang-Kyu Yoon
Publikováno v:
IEEE Transactions on Computers. 66:912-918
Hybrid memory comprised of a big SCM and a little DRAM (BSLD) is widely studied to address the growing power consumption challenge of pure DRAM. However, the performance degradation, limited endurance and immature mass production of ultra-high-densit
Publikováno v:
IEICE Electronics Express. 14:20170628-20170628
Publikováno v:
IEICE Electronics Express. 14:20161220-20161220
Publikováno v:
IEICE Electronics Express. 14:20178001-20178001