Zobrazeno 1 - 10
of 97
pro vyhledávání: '"Weilian Guo"'
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 2, Pp 1-10 (2019)
A forward-biased silicon-based light-emitting device (Si-LED) was designed and fabricated by standard 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology without any modification. For the Si-LED, wedge-shaped electrodes and needle-like
Externí odkaz:
https://doaj.org/article/98f074fd8c3946ff8bc18a82c9d66a85
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 3, Pp 1-10 (2019)
To prepare a desired negative differential resistance (NDR) device by standard complementary-metal-oxide-semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed an
Externí odkaz:
https://doaj.org/article/ec7e3cfdb9b9411da44f5beaeff2adcd
Autor:
Fan Zhao, Yidian Wang, Weilian Guo, Jia Cong, Clarence Augustine T. H. Tee, Le Song, Yelong Zheng
Publikováno v:
AIP Advances, Vol 10, Iss 3, Pp 035103-035103-7 (2020)
The rapid thermal annealing process is a key technology to control the parameters of the resonant tunneling diode (RTD) and to achieve high performance for the device. In this paper, the rapid thermal annealing process on the planar RTD has been inve
Externí odkaz:
https://doaj.org/article/99ed6bef128c4c76ba8b8574a79f7850
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 5, Pp 1-8 (2017)
This paper theoretically explores photocontrolled terahertz amplified modulator in electron plasma wave optically switched resonant tunneling diode (ORTD) gate high-electron mobility transistor. We present a developed distributed circuit model based
Externí odkaz:
https://doaj.org/article/af55a8b8729043daab4d9c46fef6ee8d
Publikováno v:
IEEE Photonics Technology Letters. 31:1979-1982
For the further integration of receivers in multi-color visible light communication systems, a novel color photodetector (PD) was designed and fabricated by using a 40 nm standard complementary metal oxide semiconductor (CMOS) process without any pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69f5d45f16eca003f0466524e893164e
https://doi.org/10.1109/lpt.2019.2952204
https://doi.org/10.1109/lpt.2019.2952204
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 3, Pp 1-10 (2019)
To prepare a desired negative differential resistance (NDR) device by standard complementary-metal-oxide-semiconductor (CMOS) process, a photoelectric dual control NDR device with a PNP bipolar-junction-transistor (BJT) and an NPN BJT was designed an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f39a52b3929fb47458954cb37dcb306
https://doi.org/10.1109/jphot.2019.2910130
https://doi.org/10.1109/jphot.2019.2910130
Publikováno v:
Electronics
Volume 9
Issue 6
Electronics, Vol 9, Iss 1049, p 1049 (2020)
Volume 9
Issue 6
Electronics, Vol 9, Iss 1049, p 1049 (2020)
This study proposes an on-chip terahertz (THz) detector designed with on-chip inset-feed rectangular patch antenna and catadioptric lens. The detector incorporates a dual antenna and dual NMOSFET structure. Radiation efficiency of the antenna reached
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4162369ae0c82d2846b72f1084048538
Publikováno v:
IEEE Photonics Journal, Vol 11, Iss 2, Pp 1-10 (2019)
A forward-biased silicon-based light-emitting device (Si-LED) was designed and fabricated by standard 0.18 μm complementary metal-oxide-semiconductor (CMOS) technology without any modification. For the Si-LED, wedge-shaped electrodes and needle-like
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d95a9cabefabf5db201547f2a1c2e08e
https://ieeexplore.ieee.org/document/8639069/
https://ieeexplore.ieee.org/document/8639069/
Publikováno v:
IEEE Photonics Journal, Vol 9, Iss 5, Pp 1-8 (2017)
This paper theoretically explores photocontrolled terahertz amplified modulator in electron plasma wave optically switched resonant tunneling diode (ORTD) gate high-electron mobility transistor. We present a developed distributed circuit model based
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8aed31dc16911d1808b5674cea04a1da
https://doi.org/10.1109/jphot.2017.2752841
https://doi.org/10.1109/jphot.2017.2752841
Publikováno v:
In Ultramicroscopy 2005 105(1):111-114