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pro vyhledávání: '"Weigi Li"'
Autor:
Martin Christopher Holland, Weigi Li, Yaochung Chen, J. H. Davies, S. P. Beaumont, I.G. Thayne, A. Paulsen, G.U. Jensen, P.K. Bhattacharya
Publikováno v:
IEEE Transactions on Electron Devices. 42:2047-2055
In this paper we present a comparative study of the high frequency performance of 80-200 mm gate length Al/sub 0.25/GaAs/GaAs/(GaAs:AlAs) superlattice buffer quantum well (QW) HEMTs, Al/sub 0.3/GaAs/In/sub 0.15/GaAs/GaAs pseudomorphic HEMTs and In/su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d01fa1c1aa79747ead90e9582a32414
https://doi.org/10.1109/16.477760
https://doi.org/10.1109/16.477760
Autor:
Thayne, I.G., Jensen, G.U., Holland, M.C., Yaochung Chen, Weigi Li, Paulsen, A., Davies, J.H., Beaumont, S.P., Bhattacharya, P.K.
Publikováno v:
IEEE Transactions on Electron Devices; 1995, Vol. 42 Issue 12, p2047-2055, 9p