Zobrazeno 1 - 10
of 2 180
pro vyhledávání: '"Weigell, P"'
Autor:
Weigell, Philipp
Volunteered Geographic Information projects like OpenStreetMap which allow accessing and using the raw data, are a treasure trove for investigations - e.g. cultural topics, urban planning, or accessibility of services. Among the concerns are the reli
Externí odkaz:
http://arxiv.org/abs/2306.04752
Autor:
Terzo, S., Andricek, L., Macchiolo, A., Moser, H. G., Nisius, R., Richter, R. H., Weigell, P.
We present the results of the characterization of silicon pixel modules employing n-in-p planar sensors with an active thickness of 150 $\mathrm{\mu}$m, produced at MPP/HLL, and 100-200 $\mathrm{\mu}$m thin active edge sensor devices, produced at VTT
Externí odkaz:
http://arxiv.org/abs/1401.2887
Autor:
Andricek, L., Beimforde, M., Macchiolo, A., Moser, H-G., Nisius, R., Richter, R. H., Terzo, S., Weigell, P.
Publikováno v:
Nucl. Instr. and Meth. A758 (2014) 30-43
The performance of pixel modules built from 75 micrometer thin silicon sensors and ATLAS read-out chips employing the Solid Liquid InterDiffusion (SLID) interconnection technology is presented. This technology, developed by the Fraunhofer EMFT, is a
Externí odkaz:
http://arxiv.org/abs/1310.5854
Autor:
Macchiolo, A., Andricek, L., Moser, H. -G., Nisius, R., Richter, R. H., Terzo, S., Weigell, P.
We present an R&D activity focused on the development of novel modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The modules consist of n-in-p pixel sensors, 100 or 200 $\mu$m thick, produced at VTT (Finland) with
Externí odkaz:
http://arxiv.org/abs/1310.4984
Autor:
Macchiolo, A., Andricek, L., Ellenburg, M., Moser, H. G., Nisius, R., Richter, R. H., Terzo, S., Weigell, P.
The R&D activity presented is focused on the development of new modules for the upgrade of the ATLAS pixel system at the High Luminosity LHC (HL-LHC). The performance after irradiation of n-in-p pixel sensors of different active thicknesses is studie
Externí odkaz:
http://arxiv.org/abs/1210.7933
Autor:
Weigell, Philipp
To cope with the higher occupancy and radiation damage at the HL-LHC also the LHC experiments will be upgraded. The ATLAS Planar Pixel Sensor R&D Project (PPS) is an international collaboration of 17 institutions and more than 80 scientists, explorin
Externí odkaz:
http://arxiv.org/abs/1210.7661
Autor:
La Rosa, A., Gallrapp, C., Macchiolo, A., Nisius, R., Pernegger, H., Richter, R. H., Weigell, P.
In view of the LHC upgrade phases towards HL-LHC the ATLAS experiment plans to upgrade the Inner Detector with an all silicon system. The n-in-p silicon technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and co
Externí odkaz:
http://arxiv.org/abs/1205.5305
Autor:
Weingarten, J., Altenheiner, S., Beimforde, M., Benoit, M., Bomben, M., Calderini, G., Gallrapp, C., George, M., Gibson, S., Grinstein, S., Janoska, Z., Jentzsch, J., Jinnouchi, O., Kishida, T., La Rosa, A., Libov, V., Macchiolo, A., Marchiori, G., Münstermann, D., Nagai, R., Piacquadio, G., Ristic, B., Rubinskiy, I., Rummler, A., Takubo, Y., Troska, G., Tsiskaridtze, S., Tsurin, I., Unno, Y., Weigell, P., Wittig, T.
Results of beam tests with planar silicon pixel sensors aimed towards the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades are presented. Measurements include spatial resolution, charge collection performance and charge sharing betw
Externí odkaz:
http://arxiv.org/abs/1204.1266
We present the results of the characterization of pixel modules composed of 75 um thick n-in-p sensors and ATLAS FE-I3 chips, interconnected with the SLID (Solid Liquid Inter-Diffusion) technology. This technique, developed at Fraunhofer-EMFT, is exp
Externí odkaz:
http://arxiv.org/abs/1202.6497
Autor:
Gallrapp, C., La Rosa, A., Macchiolo, A., Nisius, R., Pernegger, H., Richter, R. H., Weigell, P.
Publikováno v:
Nucl. Instrum. Meth. A679 (2012) 29
The performance of novel n-in-p planar pixel detectors, designed for future upgrades of the ATLAS Pixel system is presented. The n-in-p silicon sensors technology is a promising candidate for the pixel upgrade thanks to its radiation hardness and cos
Externí odkaz:
http://arxiv.org/abs/1112.5395