Zobrazeno 1 - 10
of 84
pro vyhledávání: '"Weifang Lu"'
Autor:
Kosuke Yanai, Weifang Lu, Yoma Yamane, Dong-Pyo Han, Haiyan Ou, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama, Isamu Akasaki
Publikováno v:
Nanomaterials, Vol 10, Iss 10, p 2075 (2020)
This study investigated the fabrication of porous fluorescent SiC using a constant voltage-controlled anodic oxidation process. The application of a high, constant voltage resulted in a spatial distinction between the porous structures formed inside
Externí odkaz:
https://doaj.org/article/7344bb8a53694685a0a731bd06396d90
Autor:
Kazuma Ito, Weifang Lu, Naoki Sone, Yoshiya Miyamoto, Renji Okuda, Motoaki Iwaya, Tetsuya Tekeuchi, Satoshi Kamiyama, Isamu Akasaki
Publikováno v:
Nanomaterials, Vol 10, Iss 7, p 1354 (2020)
Broadened emission was demonstrated in coaxial GaInN/GaN multiple quantum shell (MQS) nanowires that were monolithically grown by metalorganic chemical vapor deposition. The non-polar GaInN/GaN structures were coaxially grown on n-core nanowires with
Externí odkaz:
https://doaj.org/article/76eca5aa108f488496bff70ff14c2b06
Autor:
Soma Inaba, Weifang Lu, Ayaka Shima, Shiori Ii, Mizuki Takahashi, Yuki Yamanaka, Yuta Hattori, Kosei Kubota, Kai Huang, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Publikováno v:
Nanoscale Advances; 5/7/2024, Vol. 6 Issue 9, p2306-2318, 13p
Autor:
Soma Inaba, Weifang Lu, Kazuma Ito, Sae Katsuro, Nanami Nakayama, Ayaka Shima, Yukimi Jinno, Shiori Yamamura, Naoki Sone, Kai Huang, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Publikováno v:
ACS Applied Materials & Interfaces. 14:50343-50353
Core-shell GaInN/GaN multiquantum shell (MQS) nanowires (NWs) are gaining great attention for high-efficiency micro-light-emitting diodes (micro-LEDs) owing to the minimized etching region on their sidewall, nonpolar or semipolar emission planes, and
Autor:
Sae Katsuro, Weifang Lu, Kazuma Ito, Nanami Nakayama, Shiori Yamamura, Yukimi Jinno, Soma Inaba, Ayaka Shima, Naoki Sone, Dong-Pyo Han, Kai Huang, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Publikováno v:
Nanophotonics. 11:4793-4804
GaInN/GaN multi-quantum-shell (MQS) nanowires (NWs) are gaining increasing attention as promising materials for developing highly efficient long-wavelength micro-light emitting diodes (LEDs). To improve the emission properties in GaInN/GaN MQS NWs, i
Autor:
Sae Katsuro, Weifang Lu, Nanami Nakayama, Soma Inaba, Yukimi Jinno, Shiori Yamamura, Ayaka Shima, Shiori Ii, Mizuki Takahashi, Yuki Yamanaka, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Publikováno v:
Gallium Nitride Materials and Devices XVIII.
Autor:
Isamu Akasaki, Motoaki Iwaya, Koji Okuno, Naoki Sone, Kazuma Ito, Tetsuya Takeuchi, Weifang Lu, Satoshi Kamiyama, Yoshiya Miyamoto, Sae Katsuro, Nanami Nakayama
Publikováno v:
ACS Applied Materials & Interfaces. 13:54486-54496
The morphology and crystalline quality of p-GaN shells on coaxial GaInN/GaN multiple quantum shell (MQS) nanowires (NWs) were investigated using metal-organic chemical vapor deposition. By varying the trimethylgallium (TMG) flow rate, Mg doping, and
Autor:
Binghuan Chen, Weifang Lu, Penggang Li, Xu Yang, Jinchai Li, Kai Huang, Junyong Kang, Rong Zhang
Publikováno v:
Optics express. 30(13)
Localized surface plasmons exhibit promising capabilities in optoelectronic devices. In most cases, the metal nanoparticle arrays are located on interfaces or inside optical cavities. Fano interferences have been observed and explained via the interf
Autor:
Weifang Lu, Nanami Nakayama, Koji Okuno, Isamu Akasaki, Sae Katsuro, Satoshi Kamiyama, Naoki Sone, Motoaki Iwaya, Tetsuya Takeuchi, Kazuma Ito
Publikováno v:
Nanophotonics, Vol 10, Iss 13, Pp 3441-3450 (2021)
Improving current injection into r- and m-planes of nanowires (NWs) is essential to realizing efficient GaInN/GaN multiple quantum shell (MQS) NW-based light-emitting diodes (LEDs). Here, we present the effects of different p-GaN shell growth conditi
Autor:
Sae Katsuro, Weifang Lu, Naoki Sone, Kazuma Ito, Nanami Nakayama, Renji Okuda, Yoshiya Miyamoto, Yukimi Jinno, Shiori Yamamura, Motoaki Iwaya, Tetsuya Takeuchi, Satoshi Kamiyama
Publikováno v:
Gallium Nitride Materials and Devices XVII.