Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Weichun Luo"'
Publikováno v:
2021 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
Publikováno v:
2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT).
With the dimension of transistor scaling down to 3nm, device and circuit reliability attract increasing attentions in digital and analog design. Self-heating effects must be taken into account due to the introduction of FinFET structure, which will b
Publikováno v:
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
With the dimension of transistor scaling down to 5nm, design for reliability attracts more and more attentions in digital and analog circuit. Self-heating effects must be taken into account due to the introduction of FinFET structure, which will be m
Autor:
Eddy Simoen, Weichun Luo, Bo Tang, Huilong Zhu, Wenwu Wang, Longda Zhou, Tianchun Ye, Hao Xu, Yang Hong, Huaxiang Yin, Chao Zhao
Publikováno v:
IEEE Electron Device Letters. 39:1129-1132
In this letter, the effect of TiN capping layer on interface quality and the channel hot carrier (CHC) reliability of high-k/metal-gate (HKMG) nMOSFET was investigated. Experiments show that the fresh interface trap density was reduced from ${1.83}\t
Autor:
Hao Xu, Chao Zhao, Wenwu Wang, Lu-Wei Qi, Hong Yang, Dapeng Chen, Huilong Zhu, Weichun Luo, Yanrong Wang, Yefeng Xu, Bo Tang, Shangqing Ren, Tianchun Ye, Jiang Yan
Publikováno v:
Microelectronics Reliability. 62:70-73
Channel hot carrier (CHC) degradation in sub-1 nm equivalent oxide thickness (EOT) HK/MG nMOSFET has been studied in this paper. It is found that the degradation can be divided into two regimes based on stress induced drain-induced-barrier-lowering (
Autor:
Dapeng Chen, Tianchun Ye, Weichun Luo, Kai Han, Yanrong Wang, Hao Xu, Shangqing Ren, Wenwu Wang, Xueli Ma, Hong Yang, Xiaolei Wang, Chao Zhao, Jinjuan Xiang
Publikováno v:
ECS Transactions. 52:935-940
The Electric and TDDB characteristics of Si/SiO2/HfO2/TiN gate MOS capacitor (EOT ~ 9.3 A ) with different RTO temperatures are systematically studied. The TDDB characteristics are sensitive to the RTO temperatures (700oC, 800oC and 900oC), and the h
Autor:
Bo Tang, Yang Hong, Zhaoyun Tang, Hao Xu, Weichun Luo, Tianchun Ye, Jing Xu, Yan Jiang, Wenwu Wang, Chao Zhao, Shangqing Ren
Publikováno v:
ECS Transactions. 52:953-957
In this work, NBTI characteristics of pMOSFET with high-k/metal gate stacks are systematic investigated and the degradation mechanisms are analyzed. The threshold voltage shift with stress time obeys power-law, but the power exponent is dependent on
Autor:
Shuxiang Zhang, Lu-Wei Qi, Huilong Zhu, Chao Zhao, Wenwu Wang, Weichun Luo, Yanrong Wang, Dapeng Chen, Hao Xu, Jiang Yan, Hong Yang, Tianchun Ye
Publikováno v:
Chinese Physics B. 26:087304
Autor:
Dapeng Chen, Hao Xu, Jing Xu, Jiang Yan, Zhaoyun Tang, Chao Zhao, Ye Tianchun, Bo Tang, Shangqing Ren, Hong Yang, Weichun Luo, Wenwu Wang
Publikováno v:
Proceedings of the 20th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA).
In this paper, the Hot-Carrier (HC) degradation characteristics and mechanisms of nMOSFETs with high-k/metal gate (HK/MG) structure are systematically investigated. The Idsat shift under different Vd states obeys power-law of Vg stress time, and the
Autor:
Lu-Wei Qi, Yefeng Xu, Hong Yang, Junfeng Li, Hao Xu, Chao Zhao, Tianchun Ye, Dapeng Chen, Bo Tang, Wenwu Wang, Jiang Yan, Weichun Luo, Yanrong Wang, Huilong Zhu
Publikováno v:
Chinese Physics B. 25:087305
The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with