Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Weichuan Huang"'
Autor:
Chao Ma, Zhen Luo, Weichuan Huang, Letian Zhao, Qiaoling Chen, Yue Lin, Xiang Liu, Zhiwei Chen, Chuanchuan Liu, Haoyang Sun, Xi Jin, Yuewei Yin, Xiaoguang Li
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
Memristor devices based on ferroelectric tunnel junctions are promising, but suffer from quite slow switching times. Here, the authors report on ultrafast switching times at and above room temperature of 600ps in Ag/BaTiO3/Nb:SrTiO3 based ferroelectr
Externí odkaz:
https://doaj.org/article/5cd1c160ef164cdfb4f850e7eb224a9c
Autor:
Sujit Das, Valentyn Laguta, Katherine Inzani, Weichuan Huang, Junjie Liu, Ruchira Chatterjee, Margaret R. McCarter, Sandhya Susarla, Arzhang Ardavan, Javier Junquera, Sinéad M. Griffin, Ramamoorthy Ramesh
Publikováno v:
Nano Letters. 22:3976-3982
Solid-state materials are currently being explored as a platform for the manipulation of spins for spintronics and quantum information science. More broadly, a wide spectrum of ferroelectric materials, spanning from inorganic oxides to polymeric syst
Autor:
Qubo Wu, Yanchun Wang, Ziying Li, Baoping Qiao, Xiang Yu, Weichuan Huang, Chengyin Cao, Ziwei Li, Ziqiang Pan, Yucheng Huang
Publikováno v:
Minerals; Volume 12; Issue 5; Pages: 559
The Erlian basin is one of the most important basins in northern China to host sandstone-type uranium deposits (SUDs), in which Bayanwula, Saihangaobi, and Hadatu are under development, to name a few. Issues such as the metallogenic mechanism and min
Autor:
Yuewei Yin, Chao Ma, Chuanchuan Liu, Letian Zhao, Xi Jin, Xiaoguang Li, Qiaoling Chen, Haoyang Sun, Zhiwei Chen, Xiang Liu, Weichuan Huang, Yue Lin, Zhen Luo
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-9 (2020)
Nature Communications
Nature Communications
Next-generation non-volatile memories with ultrafast speed, low power consumption, and high density are highly desired in the era of big data. Here, we report a high performance memristor based on a Ag/BaTiO3/Nb:SrTiO3 ferroelectric tunnel junction (
Publikováno v:
Microscopy and Microanalysis. 26:3178-3180
Autor:
Chuangming Hou, Zhen Luo, Zhiwei Chen, Yuewei Yin, Xiaoguang Li, Weichuan Huang, Wenbo Zhao, Chuanchuan Liu
Publikováno v:
Materials Letters. 240:124-127
We studied the magnetoresistance effects in Co/Cu/Ni spin-valves with magnetic fields along different in-plane directions. When the magnetic easy axis directions of Co and Ni layers are parallel, only typical positive magnetoresistance effects were d
Publikováno v:
Tectonophysics. 833:229374
Autor:
Junjie Liu, Ruchira Chatterjee, Sinéad M. Griffin, Valentin V. Laguta, Ramamoorthy Ramesh, Arzhang Ardavan, Katherine Inzani, Evan Sheridan, Weichuan Huang, Sujit Das
Publikováno v:
Science Advances
Science advances, vol 7, iss 10
Science advances, vol 7, iss 10
We use electric fields to engineer the spin Hamiltonian of a magnetic impurity in a ferroelectric and achieve coherent control.
Magnetoelectrics, materials that exhibit coupling between magnetic and electric degrees of freedom, not only offer a
Magnetoelectrics, materials that exhibit coupling between magnetic and electric degrees of freedom, not only offer a
Autor:
Rachel Desfeux, Can Xiao, Yajun Qi, Sylvie Migot, Anthony Ferri, Luming Cheng, Sajid Rauf, Huawei Sun, Shiheng Liang, Xavier Devaux, Ruilong Wang, Yuan Lu, Xiaoguang Li, Mairbek Chshiev, Changping Yang, Weichuan Huang, T. Zhang
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, 2020, 53 (32), pp.325301. ⟨10.1088/1361-6463/ab841b⟩
Journal of Physics D: Applied Physics, IOP Publishing, 2020, 53 (32), pp.325301. ⟨10.1088/1361-6463/ab841b⟩
Journal of Physics D: Applied Physics, 2020, 53 (32), pp.325301. ⟨10.1088/1361-6463/ab841b⟩
Journal of Physics D: Applied Physics, IOP Publishing, 2020, 53 (32), pp.325301. ⟨10.1088/1361-6463/ab841b⟩
International audience; Organic multiferroic tunnel junctions (OMFTJs) with multi-resistance states have been proposed and drawn intensive interests due to their potential applications, for examples of memristor and spintronics based synapse devices.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::641d4bf42e29947c5f0f3df359036b5c
https://hal.science/hal-02881505/file/Art2004.pdf
https://hal.science/hal-02881505/file/Art2004.pdf
Autor:
Hongxin Yang, Abir Nachawaty, Xavier Devaux, Mairbek Chshiev, Rachel Desfeux, Jianping Liu, Yuan Lu, Guichao Hu, Mathieu Stoffel, Anthony Ferri, Didier Rouxel, Xiaoguang Li, Chunping Jiang, Antonio Da Costa, Shiheng Liang, Zhongming Zeng, Weichuan Huang, Hui Yang, Xue Gao
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2020, 116 (15), pp.152905. ⟨10.1063/1.5145316⟩
Applied Physics Letters, 2020, 116 (15), pp.152905. ⟨10.1063/1.5145316⟩
Applied Physics Letters, American Institute of Physics, 2020, 116 (15), pp.152905. ⟨10.1063/1.5145316⟩
Applied Physics Letters, 2020, 116 (15), pp.152905. ⟨10.1063/1.5145316⟩
International audience; We report on the fabrication of an organic multiferroic tunnel junction (OMFTJ) based on an organic barrier of the Poly(vinylidene fluoride) (PVDF):Fe3O4 nanocomposite. By adding Fe3O4 nanoparticles into the PVDF barrier, we f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b57d04117ffc5b65edffca8a49f2db20
https://hal.archives-ouvertes.fr/hal-02573086
https://hal.archives-ouvertes.fr/hal-02573086