Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Wei-xi Chen"'
Autor:
Qian-lin XIAO, Tian-hui HUANG, Chang ZHOU, Wei-xi CHEN, Jian-kui CHA, Xi-mei WEI, Fang-yu XING, Meng-ya QIAN, Qian-nan MA, Hong DUAN, Zhi-zhai LIU
Publikováno v:
Journal of Integrative Agriculture, Vol 22, Iss 2, Pp 642-649 (2023)
Sucrose nonfermenting-related protein kinase 1 (SnRK1) is one of the critical serine/threonine protein kinases. It commonly mediates plant growth and development, cross-talks with metabolism processes and physiological responses to biotic or abiotic
Externí odkaz:
https://doaj.org/article/5b1b9ff44cac4678bc21cfcbd83b346b
Publikováno v:
In Journal of Iron and Steel Research International 2006 13(3):51-56
Publikováno v:
Organic Letters. 15:5542-5545
A concise gold-catalyzed method for the preparation of anthracenes from o-alkynyldiarylmethanes has been developed. Under mild reaction conditions, versatile anthracene derivatives were formed in moderate to good yields. The high flexibility, broad s
Publikováno v:
ChemInform. 45
Notable features of this novel gold-catalyzed hydroarylation process include tolerance of a wide range of functional groups, mild reaction conditions, simple procedure, and no need to avoid moisture or air.
Publikováno v:
Solid State Communications. 96:843-846
We have observed and analyzed the effect of persistent photoconductivity on the photoconductivity spectra in GaxIn1−xPInP:Fe (x < 0.18), and have suggested various possible ways to reduce the effect. Using the assumption of a macroscopic potential
Autor:
Zhi Li, Song Liang, Song Yue, Jiaoqing Pan, Yang Wang, Hong-Yan Yu, Tao Hong, Wei-Xi Chen, Guangzhao Ran
Publikováno v:
Web of Science
A 1.55 μm hybrid InGaAsP-Si laser was fabricated by the selective area metal bonding method. Room temperature continuous lasing with a maximum output power of 0.45 mW is realized.
Autor:
Peng-fei Jiao, Zongju Xia, Yu-zhen Tong, Shu-min Wang, Xiao-zhong Dang, Yinghua Zou, Wei-xi Chen, Yu-guang Hong, Guoyi Zhang
Publikováno v:
Solid State Communications. 96:675-677
The direct observation of refractive-index spectral hole burning in InGaAs GaAs strain layer, and asymmetric double quantum well(ADQW) are demonstrated. The spectral hole burning is believed to be related to nonthermal relaxation mechanism. The nonth
Publikováno v:
Solid State Communications. 91:945-947
Femtosecond time-resolved reflectivity investigations reveal a significant reduction in carrier lifetime from 100ps in nonintentionally doped InP to less than 1ps in S, Fe, and Zn doped InP. This reduction is because S, Fe, and Zn in InP serve as rec
Publikováno v:
Solid State Communications. 88:461-463
Solid-Phase Epitaxial Pd/Ge Ohmic contact to GaAs has a low specific contact resistivity (5×10 -7 cm -2 on 10 18 cm -3 n-GaAs). The cross-sectional TEM photomicrograph shows the interface between the contact and the GaAs is planar and abrupt to with
Autor:
Tao Hong, Yang Wang, Hong-Yan Yu, Song Yue, Wei-Xi Chen, Song Liang, Zhi Li, Jiao-Qing Pan, Guang-Zhao Ran
Publikováno v:
2010 7th IEEE International Conference on Group IV Photonics (GFP); 2010, p13-15, 3p