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pro vyhledávání: '"Wei-Shian Chen"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 63-67 (2018)
In this paper, high performance quadruple gate-embedded T structured GaN-based metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) were fabricated using laser interference photolithography method and photoelectrochemical oxidation
Externí odkaz:
https://doaj.org/article/cac786ae06b043f3afee249707b76ce3
