Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Wei-Ren Syong"'
An Investigation of Anode Hole Injection-Induced Abnormal Body Current in n-Channel HfO2/TiN MOSFETs
Autor:
Jih-Chien Liao, Ting-Chang Chang, Wei-Ren Syong, Kai-Chun Chang, Ying-Hsin Lu, Hsi-Wen Liu, Chien-Yu Lin, Li-Hui Chen, Fu-Yuan Jin, Yu-Hsuan Chen, Chen-Hsin Lien, Osbert Cheng, Cheng-Tung Huang, Yi-Han Ye
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 803-807 (2018)
This paper investigates an anode hole injection (AHI)-induced abnormal body current (abn IB) in n-channel HfO2/TiN MOSFETs. Traditionally, body current is independent of gate voltage during initial electrical characteristic measurements. Nevertheless
Externí odkaz:
https://doaj.org/article/fc94dd4ed6f6434084103894f7b2bc91
Autor:
Ching-Han Mao, Chin-Chien Chung, Wei-Ren Syong, Yu-Chi Yao, Kai-Yuan Hsiao, Ming-Yen Lu, Mario Hofmann, Ya-Ping Hsieh, Yu-Jung Lu, Ta-Jen Yen
Publikováno v:
ACS Photonics. 10:1495-1503
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0bb900fe1ae82834fe5a8106f69c46c
https://doi.org/10.1021/acsphotonics.3c00100
https://doi.org/10.1021/acsphotonics.3c00100
Autor:
Zong-Yi Chiao, Yu-Chia Chen, Jia-Wern Chen, Yu-Cheng Chu, Jing-Wei Yang, Tzu-Yu Peng, Wei-Ren Syong, Ho Wai Howard Lee, Shi-Wei Chu, Yu-Jung Lu
Publikováno v:
Nanophotonics. 11:2891-2899
Plasmonic structural color, in which vivid colors are generated via resonant nanostructures made of common plasmonic materials, such as noble metals have fueled worldwide interest in backlight-free displays. However, plasmonic colors that were withst
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f93ce5ced952c1ef1d7a8d29181c5a9
https://doi.org/10.1515/nanoph-2022-0071
https://doi.org/10.1515/nanoph-2022-0071
Autor:
Pu-Jia Hsieh, Jiun-Yun Li, Chi-Te Liang, Hung-Yu Tsao, Chih-Ying Chiang, Kai-Syang Hsu, Min-Jui Lin, Ching-Chen Yeh, Yu-Jui Wu, Jeng-Chung Chen, Wei-Ren Syong
Publikováno v:
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA).
In this work, we present measurements of Si n-MOSFETs at temperatures ranging from 1.5 K to 300 K to and Coulomb blockade in a gate-defined Si MOS quantum dot (QD). Current-voltage (I-V) characteristics of Si n-MOSFETs are presented with a decreasing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::346088615d6411ed4691de3b51a97b49
https://doi.org/10.1109/vlsi-tsa51926.2021.9440109
https://doi.org/10.1109/vlsi-tsa51926.2021.9440109
An Investigation of Anode Hole Injection-Induced Abnormal Body Current in n-Channel HfO2/TiN MOSFETs
Autor:
Yu-Hsuan Chen, Fu-Yuan Jin, Chien-Yu Lin, Yi-Han Ye, Wei-Ren Syong, Hsi-Wen Liu, Cheng Tung Huang, Chenhsin Lien, Ting-Chang Chang, Osbert Cheng, Kai-Chun Chang, Ying-Hsin Lu, Jih-Chien Liao, Li-Hui Chen
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 803-807 (2018)
This paper investigates an anode hole injection (AHI)-induced abnormal body current (abn IB) in n-channel HfO2/TiN MOSFETs. Traditionally, body current is independent of gate voltage during initial electrical characteristic measurements. Nevertheless
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::677fb013903b33f39a5926eca4aeb966
https://doi.org/10.1109/jeds.2018.2850063
https://doi.org/10.1109/jeds.2018.2850063
Autor:
Chien-Yu Lin, Wei-Ren Syong, Osbert Cheng, Jih-Chien Liao, Ying-Hsin Lu, Yu-Shan Lin, Cheng Tung Huang, Hsi-Wen Liu, Wei-Ting Yen, Chenhsin Lien, Ting-Chang Chang, Fong-Min Ciou
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 17:799-801
This letter investigates the impact of two different TiN capping metal thicknesses on high-k oxygen vacancies in n-MOSFETs. Traditionally, oxygen vacancies in HfO2 can be repaired by nitrogen in the TiN gate, and these repairs become more pronounced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9b3955876dc79e4239911e2ba7d83cd
https://doi.org/10.1109/tdmr.2017.2743759
https://doi.org/10.1109/tdmr.2017.2743759