Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Wei-Ran Kong"'
Publikováno v:
IEEE Transactions on Electron Devices. 61:2350-2356
A highly reliable 2-bits/cell split-gate flash memory cell in a novel program-disturbs immune array architecture is fabricated and demonstrated. Using a novel metal interconnect technique, a new virtual-ground array architecture is realized to greatl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1afd0487925c7296d3283de7cd8f570e
https://doi.org/10.1109/ted.2014.2326975
https://doi.org/10.1109/ted.2014.2326975
Autor:
Jun He, Ching-Dong Wang, Yaoqi Dong, Wei-Ran Kong, Jun Wang, Xiaohua Cheng, Zhenhai Sun, Liu-Jiang Yu, Rui Li
Publikováno v:
Microelectronic Engineering. 88:3270-3274
The removal of silicide-block-film is crucial for device stability, reliability and subsequent silicide formation. In this paper, various silicide block etch processes, i.e. dry and wet etch, were studied and compared. Possible plasma charging damage
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::955dbeac2c6f123fae7cb4ad3df13496
https://doi.org/10.1016/j.mee.2011.06.028
https://doi.org/10.1016/j.mee.2011.06.028
Autor:
Liu-Jiang Yu, Ching-Dong Wang, Chun-Qi Geng, Rui Li, Wei-Ran Kong, Jiang Ning, Kevin Huang, Kai Tao
Publikováno v:
IEEE Electron Device Letters. 28:360-362
Mechanical stress-enhanced plasma process-induced damage (PPID) in 0.13-mum pMOSFET was investigated. The PPID, which was initially charged neutral, became positively charged during hydrogen annealing, thus, changing the PMOS threshold voltage (Vth).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6557131c9cab31370d3eade93d321dc3
https://doi.org/10.1109/led.2007.894644
https://doi.org/10.1109/led.2007.894644
Autor:
Rui Li, Wei-Ran Kong, Kai Tao, Liu-Jiang Yu, Kevin Huang, Jiang Ning, Chun-Qi Geng, Ching-Dong Wang
Publikováno v:
IEEE Electron Device Letters; May2007, Vol. 28 Issue 5, p360-362, 3p, 5 Graphs