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pro vyhledávání: '"Wei-Nan Fang"'
Autor:
Wei-nan Fang, 方偉南
98
In this research, a parallel-plate plasma reactor(PECVD) is used to hydrogenate polysilicon thin-film transistors(TFT’s). And we find that the H+ and H have different diffusing length at different substrate temperature. Hence, we propose a
In this research, a parallel-plate plasma reactor(PECVD) is used to hydrogenate polysilicon thin-film transistors(TFT’s). And we find that the H+ and H have different diffusing length at different substrate temperature. Hence, we propose a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/89456485798733398689
Autor:
Che-Chin Yang, Kai En Lin, Wei-Nan Fang, Jian-Shiun Chen, Yi-Ching Wu, Yung-Chieh Kuo, Hung-Bo Lu
Publikováno v:
2015 International Conference on Planarization/CMP Technology (ICPT); 1/1/2015, p1-3, 3p
Autor:
Lu Y; Divison of Health Education Theory and Policy, Chinese Center for Health Education (Health News and Communication Center, Ministry of Health), Beijing 100011, China., Li YH, Cheng YL, Nie XQ, Li M, Tian XY, Ma Y, Wei NF, Mao QA
Publikováno v:
Zhonghua yu fang yi xue za zhi [Chinese journal of preventive medicine] [Zhonghua Yu Fang Yi Xue Za Zhi] 2012 Jun; Vol. 46 (6), pp. 495-9.