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pro vyhledávání: '"Wei-Nan Fang"'
Autor:
Wei-nan Fang, 方偉南
98
In this research, a parallel-plate plasma reactor(PECVD) is used to hydrogenate polysilicon thin-film transistors(TFT’s). And we find that the H+ and H have different diffusing length at different substrate temperature. Hence, we propose a
In this research, a parallel-plate plasma reactor(PECVD) is used to hydrogenate polysilicon thin-film transistors(TFT’s). And we find that the H+ and H have different diffusing length at different substrate temperature. Hence, we propose a
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/89456485798733398689
Autor:
Che-Chin Yang, Kai En Lin, Wei-Nan Fang, Jian-Shiun Chen, Yi-Ching Wu, Yung-Chieh Kuo, Hung-Bo Lu
Publikováno v:
2015 International Conference on Planarization/CMP Technology (ICPT); 1/1/2015, p1-3, 3p
