Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Wei-Jun Tung"'
Autor:
Chen-Chia Fan, Erik S. Jeng, Hong-Xiu Chen, Wei-Jun Tung, Kuang-Hao Chiang, Shang-Wei Chou, Kang-Ming Peng
Publikováno v:
Japanese Journal of Applied Physics. 53:096502
The promising use of non-overlapped implantation (NOI) n-type MOSFETs as nonvolatile memory (NVM) devices has received considerable interest owing to their simple device structure and compatibility with logic CMOS processing. In NOI n-type MOSFETs, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53a40a5c9f5f72da92e663098c6f2028
https://doi.org/10.7567/jjap.53.096502
https://doi.org/10.7567/jjap.53.096502
Autor:
Erik S. Jeng, Chen-Chia Fan, Kang-Ming Peng, Shang-Wei Chou, Hong-Xiu Chen, Wei-Jun Tung, Kuang-Hao Chiang
Publikováno v:
Japanese Journal of Applied Physics; Sep2014, Vol. 53 Issue 9, p1-1, 1p