Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Wei-Ji Liu"'
Publikováno v:
Petroleum Science, Vol 16, Iss 5, Pp 1134-1147 (2019)
Abstract Torsional impact drilling is a new technology which has the advantages of high rock-breaking efficiency and a high rate of penetration (ROP). So far, there is no in-depth understanding of the rock-breaking mechanism for the ROP increase from
Externí odkaz:
https://doaj.org/article/c4d34857201c43b79712ed5fb9f5f028
Publikováno v:
Petroleum Science (KeAi Communications Co.). Oct2023, Vol. 20 Issue 5, p3131-3142. 12p.
Autor:
Shi-Young Liu, Wen-Jun Zhang, Rong-Gui Zhang, Chun-Guang Liang, Wei-Ji Liu, Fa-Wang Yan, Xian-Jie Li, Jin-Ping Ao
Publikováno v:
Applied Physics Letters. 78:2793-2795
Extremely uniform and high-density In0.15Ga0.85As/GaAs quantum wires (QWRs) were naturally formed on a (553)B-oriented GaAs substrate by molecular-beam epitaxy. The density of the QWRs is as high as 4.0×105 cm−1. The strong photoluminescence peak
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af1d318a0672e69a2506afaca4d95ff4
https://doi.org/10.1063/1.1365949
https://doi.org/10.1063/1.1365949
Autor:
Jin-Ping Ao, Shiyong Liu, Xianjie Li, Yonglin Zhao, Chun-Guang Liang, Qing-Ming Zeng, Wei-Ji Liu
Publikováno v:
IEEE Electron Device Letters. 21:200-202
Using strained aluminum-rich In/sub 0.45/Al/sub 0.55/As as Schottky contact materials to enhance the barrier height and indium-rich In/sub 0.75/Ga/sub 0.25/As as channel material to enhance the channel performance, we have developed InP-based enhance
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::04fffe236244a4cbcb851929df2a429f
https://doi.org/10.1109/55.841295
https://doi.org/10.1109/55.841295
Autor:
Qing-Ming Zeng, Chun-Guang Liang, Quan-Shu Wang, Xiao-Chun Xu, Xian-Jie Li, Wei-Ji Liu, Jian-Kui Guo
Publikováno v:
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443).
A divide-by-2 Static frequency divider using AlGaAs/GaAs heterojunction bipolar transistors (HBTs) was described based on a master-slave D flip-flops. For a HBT with a 3.5/spl times/8 /spl mu/m/sup 2/ emitter had a DC current gain of 30. The unity cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d8313fc5d6dc31608403d4b0c3e6220
https://doi.org/10.1109/icsict.2001.982147
https://doi.org/10.1109/icsict.2001.982147
Autor:
Jin-Ping Ao, Chun-Guang Liang, Wei-Ji Liu, Shiyong Liu, Qing-Ming Zeng, Zhi-Gong Wang, Rong Wang, Xianjie Li
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191).
An 850 nm wavelength monolithic integrated photoreceiver with a novel single-power-supplied transimpedance amplifier is reported based on 0.8 /spl mu/m depleted GaAs PHEMT technology. The IC consists of an MSM photodetector and a transimpedance ampli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f23bf5613acd25788fe6bacc5bee19a
https://doi.org/10.1109/gaas.2001.964348
https://doi.org/10.1109/gaas.2001.964348
Publikováno v:
Fiber Optics and Optoelectronics for Network Applications.
A monolithic integrated photoreceiver for 1 .55-urn wavelength fiber-optic receivers has been designed and fabricated with one amplifier stage, two stages of source follower and a feedback resistance structure. The optoelectronic integrated circuit (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8bf150f5025e70166c04578cbc35ced
https://doi.org/10.1117/12.444553
https://doi.org/10.1117/12.444553
Autor:
Xian-Jie Li, Jin-Ping Ao, Rong Wang, Wei-Ji Liu, Zhi-Gong Wang, Qing-Ming Zeng, Shi-Yong Liu, Chun-Guang Liang
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposiums. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191); 2001, p65-69, 5p
Autor:
Jin-Ping Ao, Wei-Ji Liu, Qing-Ming Zeng, Xian-Jie Li, Yong-Lin Zhao, Xiao-Chun Xu, Chun-Guang Liang
Publikováno v:
ICMMT 2000. 2000 2nd International Conference on Microwave & Millimeter Wave Technology Proceedings (Cat. No.00EX364); 2000, p156-159, 4p
Publikováno v:
ICMMT 2000. 2000 2nd International Conference on Microwave & Millimeter Wave Technology Proceedings (Cat. No.00EX364); 2000, p153-155, 3p