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pro vyhledávání: '"Wei-Jen Hsueh"'
Autor:
Wei-Jen Hsueh, 薛惟仁
106
Over the last 50 years, Si-based complementary metal-oxide-semiconductor (CMOS) technology has advanced closely following Moore’s Laws, which has in turn facilitated the development of information technology era. However, device scaling of
Over the last 50 years, Si-based complementary metal-oxide-semiconductor (CMOS) technology has advanced closely following Moore’s Laws, which has in turn facilitated the development of information technology era. However, device scaling of
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/be46f8
Publikováno v:
Journal of Crystal Growth. 425:385-388
Growth of InGaSb/AlSb high hole mobility quantum well field effect transistors (QW FETs) on Si substrates with a step-graded GaAsSb metamorphic buffer layer by molecular beam epitaxy is explored. With an optimized growth temperature for the InGaSb/Al
Autor:
Yu Hsun Chou, Tzy-Rong Lin, Sheng-Di Lin, Shih Wei Lin, Yen Mo Wu, Wei Jen Hsueh, Yi Cheng Chung, Bo-Tsun Chou, Tien-Chang Lu
Publikováno v:
Scientific Reports
Plasmonic devices have advanced significantly in the past decade. Being one of the most intriguing devices, plamonic nanolasers plays an important role in biomedicine, chemical sensor, information technology, and optical integrated circuits. However,
Publikováno v:
physica status solidi (b). 254:1600589
We have successfully mitigated the out-diffusion of Ge during molecular beam epitaxy of InGaAs on Ge by using a GaAsSb barrier layer as evidenced by secondary ion mass spectroscopy. Compared to GaAs, this GaAsSb barrier layer also results in a smooth
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 35:01B106
The electrical, structural, and chemical properties of HfO2/Al2O3/GaSb metal-oxide-semiconductor capacitors (MOSCAPs) fabricated on Sb-rich (2 × 5) and Sb-stabilized (1 × 3) surfaces by atomic layer deposition are characterized. A combination of th
Autor:
Wei Jen Hsueh, 薛惟仁
97
The thesis is aimed to simulate the device properties of enhancement-mode InP-based In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) using APSYS commercial software. The device characteristics investigated include DC
The thesis is aimed to simulate the device properties of enhancement-mode InP-based In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) using APSYS commercial software. The device characteristics investigated include DC
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/62176494365636642138
Publikováno v:
ECS Meeting Abstracts. :1402-1402
High mobility III-V compound semiconductors have been extensively investigated recently for future complementary metal-oxide-semiconductor (CMOS) applications. GaSb, which has high electron and hole mobilities as well as a narrow bandgap is an attrac
Publikováno v:
Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jan2017, Vol. 35 Issue 1, p1-6, 6p
Autor:
Hsiao Yu Lin, Tsung Hung Chiang, Minghwei Hong, J. Raynien Kwo, Tun Wen Pi, Wei Jen Hsueh, Rei Lin Chu, Gail J. Brown, Wei Chin Lee, Tsung Da Lin, Jen-Inn Chyi, Tsung Shiew Huang
Publikováno v:
Applied Physics Express. 6:121201
Y2O3 and Al2O3 were deposited onto GaSb(100) surfaces by molecular beam epitaxy and atomic layer deposition, respectively. Angle-resolved X-ray photoelectron spectroscopy and electrical measurements were used to probe the two oxide/semiconductor inte
Autor:
Jen-Inn Chyi, Nien Tze Yeh, Clement Hsingjen Wann, Wei Jen Hsueh, Pei Chin Chiu, Chao Ching Cheng, Chih-Hsin Ko, You Ru Lin
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:061207
A GaAsSb step-graded metamorphic buffer layer is used for growing InAs/AlSb high electron mobility transistor structures on Si substrate by molecular beam epitaxy. The step-graded metamorphic buffer layer effectively reduces the number of microtwins