Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Wei-Hao Shu"'
Autor:
Tung-Ming Pan, Wei-Hao Shu
Publikováno v:
Journal of The Electrochemical Society. 155:G72
A high-k NdTiO 3 gate dielectric was formed in films using Ti added to Nd 2 O 3 film prepared under various Nd metal thicknesses through radio frequency (rf) sputtering and annealed at 700°C. The structural and compositional features of these films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e9aba0c5929c52d567af20e44c77454
https://doi.org/10.1149/1.2835213
https://doi.org/10.1149/1.2835213
Autor:
Tung-Ming Pan, Wei-Hao Shu
Publikováno v:
Journal of The Electrochemical Society. 155:H247
This paper describes the structural properties and electrical characteristics of thin erbium titanium oxide (Er 2 TiO 5 ) as gate dielectrics deposited on silicon substrates through reactive radio frequency sputtering. The structural and morphologica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43114b6477051ce17d3042419a299ed3
https://doi.org/10.1149/1.2839556
https://doi.org/10.1149/1.2839556
Autor:
Tung-Ming Pan, Wei-Hao Shu
Publikováno v:
Applied Physics Letters. 91:172904
In this letter, we study the structural and electrical properties of high-k neodymium titanium oxide (NdTiO3) gate dielectrics deposited on Si (100) substrates by reactive rf sputtering. We find that the capacitance value of NdTiO3 gate dielectric pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15a458fc685600f8e0ee4c8778be5366
https://doi.org/10.1063/1.2800307
https://doi.org/10.1063/1.2800307
Publikováno v:
Applied Physics Letters. 90:222906
The authors report on the structural and electrical characteristics of high-k erbium titanium oxide (Er2TiO5) gate dielectrics deposited on Si (100) substrates by reactive rf sputtering. They find that the capacitance value of Er2TiO5 gate dielectric
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09d11fb1c41e4ffe0cb9aae78cec8a6c
https://doi.org/10.1063/1.2744486
https://doi.org/10.1063/1.2744486
Publikováno v:
Electrochemical and Solid-State Letters. 10:G54
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cd2d7a16fb177fc69ccab9f4e50ea7d0
https://doi.org/10.1149/1.2742497
https://doi.org/10.1149/1.2742497
Publikováno v:
Applied Physics Letters. 89:232908
In this letter, the authors reported a high-k neodymium oxide gate dielectric grown by reactive rf sputtering. It is found that the Nd2O3 gate dielectric after annealing at 700°C exhibits excellent electrical properties such as low equivalent oxide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4975fc7d1b27a91f3ba4828970f7472f
https://doi.org/10.1063/1.2402237
https://doi.org/10.1063/1.2402237
Autor:
Tung-Ming Pan, Wei-Hao Shu
Publikováno v:
Journal of The Electrochemical Society; 2008, Vol. 155 Issue 4, pH247-H253, 7p, 1 Chart, 20 Graphs