Zobrazeno 1 - 10
of 27
pro vyhledávání: '"Wei-Fan Lee"'
Autor:
Min-Hao Hong, Chun-Wei Chang, Dung-Ching Perng, Kuan-Ching Lee, Shiu-Ko Jang Jian, Wei-Fan Lee, Yen Chuang, Yu-Ta Fan, Woo Sik Yoo
Publikováno v:
AIP Advances, Vol 2, Iss 3, Pp 032150-032150-10 (2012)
B-doped, thin Si1-xGex bi-layers with different Ge content and B concentrations were epitaxially grown on Si(100) device wafers. Diffusion behavior of Ge and B atoms during rapid thermal annealing were monitored by multiwavelength micro-Raman spectro
Externí odkaz:
https://doaj.org/article/d5c3a98906c945a1aa0ea730ca976625
Autor:
Chun-Wei Chang, Min-Hao Hong, Wei-Fan Lee, Kuan-Ching Lee, Shen-Min Yang, Ming-Shan Tsai, Yen Chuang, Yu-Ta Fan, Noriyuki Hasuike, Hiroshi Harima, Takeshi Ueda, Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo
Publikováno v:
AIP Advances, Vol 2, Iss 2, Pp 022117-022117-11 (2012)
Multiwavelength, high resolution micro-Raman spectroscopy was applied to in-line process monitoring and diagnostics of undoped and B-doped Si1-xGex epitaxy on Si(100) device wafers. This noncontact technique was used to monitor the Ge content, B conc
Externí odkaz:
https://doaj.org/article/a08ae978fee14a61a4e03d2272d85f78
Autor:
Chun-Wei Chang, Min-Hao Hong, Wei-Fan Lee, Kuan-Ching Lee, Shiu-Ko Jang Jian, Yen Chuang, Yu-Ta Fan, Noriyuki Hasuike, Hiroshi Harima, Takeshi Ueda, Toshikazu Ishigaki, Kitaek Kang, Woo Sik Yoo
Publikováno v:
AIP Advances, Vol 2, Iss 1, Pp 012124-012124-8 (2012)
Non-contact monitoring of Ge content and B concentration in single and double Si1-xGex epitaxial layers on Si(100) device wafers was attempted using high-resolution, multiwavelength micro-Raman spectroscopy. The Ge content and B concentration determi
Externí odkaz:
https://doaj.org/article/212d8a7e9b6b420f87ff8e4bd282227e
Autor:
Wei-Fan Lee, 李暐凡
93
This study can be divided into two parts. One is about self-assembled monolayers (SAMs) of carboxylic acids adsorbed on a silver surface undergoing a reversible reorganization to form discrete clusters of hydrogen-bonded free acids upon expos
This study can be divided into two parts. One is about self-assembled monolayers (SAMs) of carboxylic acids adsorbed on a silver surface undergoing a reversible reorganization to form discrete clusters of hydrogen-bonded free acids upon expos
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/77559579276068641415
Autor:
Woo Sik Yoo, Wei-Fan Lee, Ming-Shan Tsai, Yen Chuang, Yu-Ta Fan, Toshikazu Ishigaki, Chun-Wei Chang, Min-Hao Hong, Kitaek Kang, Takeshi Ueda, Kuan-Ching Lee
Publikováno v:
Journal of Electronic Materials. 41:3125-3129
Undoped and B-doped epitaxial Si1−x Ge x layers on Si(100) were characterized using a long-focal-length, polychromator-based, multiwavelength micro- Raman spectroscopy system. The peak position and full-width at half-maximum of the Si–Si signal f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::77325a6e3a6bc3f9e2cb3b2348607a00
https://doi.org/10.1007/s11664-012-2207-2
https://doi.org/10.1007/s11664-012-2207-2
Autor:
Woo Sik Yoo, Toshikazu Ishigaki, Wei-Fan Lee, Yen Chuang, Kitaek Kang, Yi-Hann Chen, Min-Hao Hong, Chun-Wei Chang, Kuan-Ching Lee, Yu-Ta Fan, Li-De Tseng, Takeshi Ueda
Publikováno v:
Journal of Materials Research. 27:1314-1323
Boron-doped, single (∼54 nm) or double (∼21 + 54 nm) Si1−xGex layers were epitaxially grown on 300-mm-diameter p−-Si(100) device wafers with 20 nm technology node design features, by ultrahigh vacuum chemical vapor deposition. The Si1−xGex/
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87c43c2c4b3a0333f0bce2474d1f5dec
https://doi.org/10.1557/jmr.2012.88
https://doi.org/10.1557/jmr.2012.88
Publikováno v:
Nano Letters. 11:4348-4351
In(2)Se(3) is an essential phase change material and CuInSe(2) is the fundamental basis of the copper-indium-gallium-diselenide (CIGS) solar energy material. In this paper, we demonstrate the feasibility to transform the phase change material to the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8c1b8f22f00db711460262a4d2e34eb5
https://doi.org/10.1021/nl202463w
https://doi.org/10.1021/nl202463w
Autor:
Sheng-Yu Chen, Kao-Feng Liao, Ming-Pei Lu, Wei-Fan Lee, Lih-Juann Chen, Chung-Yang Lee, Chi-Te Huang
Publikováno v:
The Journal of Physical Chemistry C. 113:2286-2289
Free-standing single-crystal NiSi2 nanowires (NWs) were synthesized on Ni foil with a simple vapor transport method. The growth of previously elusive Si-rich silicide NWs was achieved with the addition of NiCl2 powders in front of the Ni substrate up
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1c4f2a795c6dd1522c3aaaab699953e
https://doi.org/10.1021/jp809029q
https://doi.org/10.1021/jp809029q
Autor:
Yue Hao, Chi-Te Huang, Zhong Lin Wang, Zhiyuan Gao, Der Hsien Lien, Chung-Min Tsai, Wei-Fan Lee, Lih-Juann Chen, Jinhui Song
Publikováno v:
Advanced materials (Deerfield Beach, Fla.). 22(36)
CTH and JHS contributed equally to the research in this paper. Research was supported by DARPA (Army/AMCOM/REDSTONE AR, W31P4Q-08-1-0009), BES DOE (DE-FG02-07ER46394), KAUST, and NSF (DMS0706436, CMMI 0403671). Thanks are also due to National Science
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2029333475cdfcbbdff818612c3a7b70
https://pubmed.ncbi.nlm.nih.gov/20677189
https://pubmed.ncbi.nlm.nih.gov/20677189
Autor:
Lih-Juann Chen, Zhong Lin Wang, Chi-Te Huang, Zhiyuan Gao, Wei-Fan Lee, Jinhui Song, Yong Ding, Yue Hao
Publikováno v:
Journal of the American Chemical Society. 132(13)
Three-fold symmetrically distributed GaN nanowire (NW) arrays have been epitaxially grown on GaN/sapphire substrates. The GaN NW possesses a triangular cross section enclosed by (0001), (2112), and (2112) planes, and the angle between the GaN NW and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2b8fbfc4fd74346fee2250c02febf9df
https://pubmed.ncbi.nlm.nih.gov/20218713
https://pubmed.ncbi.nlm.nih.gov/20218713