Zobrazeno 1 - 10
of 90
pro vyhledávání: '"Wei-E Wang"'
Publikováno v:
Modern Physics Letters B. 36
In this experiment, europium(III)-ibuprofen-phenanthroline complexes, dysprosium(III)-ibuprofen-phenanthroline complexes and terbium(III)-ibuprofen-phenanthroline complexes were prepared separately, established a ternary solid complex system, perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fcd29382d876fc57bb4d6e1e0e28c37e
https://doi.org/10.1142/s0217984922500452
https://doi.org/10.1142/s0217984922500452
Autor:
Terri T. Ni, Xuejiao Zhu, Kaa Seng Lai, Leah M. Sawyer, Xueli Hu, Chunyu Zeng, Wenbin Fu, Gary A. Sulikowski, Tao P. Zhong, Wei E Wang, Guangju Yu, Yating Zhou, Plamen P. Christov, Zhongzhou Yang, Xiangwen Peng, Ethan Lee, Shuying Xie
Publikováno v:
J Mol Cell Biol
There are intense interests in discovering proregenerative medicine leads that can promote cardiac differentiation and regeneration, as well as repair damaged heart tissues. We have combined zebrafish embryo-based screens with cardiomyogenesis assays
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f0936c9bd7c2a8cb711d58cb606d614
https://doi.org/10.1093/jmcb/mjz023
https://doi.org/10.1093/jmcb/mjz023
Publikováno v:
2020 IEEE Silicon Nanoelectronics Workshop (SNW).
In this report, we successfully demonstrate V T (threshold voltage) tuning in both n- and p- SOI nanowire FETs (NWFET) using ultrathin atomic layer deposition (ALD) dipole layers (Y 2 O 3 and Al 2 O 3 ) inserted directly under the ALD HfO 2 (3 nm). 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7210f36fbd75a8cd4dfd7b21140ce1fc
https://doi.org/10.1109/snw50361.2020.9131427
https://doi.org/10.1109/snw50361.2020.9131427
A New Direction for III–V FETs for Mobile CPU Operation Including Burst-Mode: In0.35Ga0.65As Channel
Autor:
S.-C. Baek, Obradovic Borna J, Titash Rakshit, Rita Rooyackers, D. Kim, Wei-E Wang, Nadine Collaert, S. C. Ardila, Jiwon Lee, S.-W. Lee, A. Vais, Yeon-Cheol Heo, W.-H. Kim, D. Lin, Mirco Cantoro, Mark S. Rodder, A. Hoover, K.-M. Shin, W.-B. Song, Sanghyeon Kim
Publikováno v:
IEEE Electron Device Letters. 38:314-317
In this letter, we show that conventional III–V MOSFETs with moderate/high In content channels (In0.53Ga0.47As or In0.70Ga0.30As) at scaled nodes are incompatible with mobile SoC designs, which often operate at intermediate/high ${V_{{\mathrm {dd}}
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d1b9b1b8101ba9d70e95f9c07fffccd9
https://doi.org/10.1109/led.2017.2658447
https://doi.org/10.1109/led.2017.2658447
Autor:
Jie Liu, Xiongwen Chen, Xuewei Xia, Xiaoyan Wu, Guo Yu, Shen Ao, Miyuraj Harishchandra Hikkaduwa Withanage, Min Zhou, Weizhong Zhu, Bing Xu, Ying Tian, Mantian Mi, Chunyu Zeng, Wei E Wang, Xiaoying Zhang, Erliang Zeng, Steven R. Houser, Jining Yang, Yang Kevin Xiang
Publikováno v:
Circulation Research. 125
In adult mammalian hearts, the ventricles are composed of mostly binucleated myocytes (BVMs) and some mononucleated myocytes (MVMs), which have different properties. However, if the gene expression profile and pathological responses of these two popu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2af0bd5ccbfb75331b77dc2d682789d7
https://doi.org/10.1161/res.125.suppl_1.360
https://doi.org/10.1161/res.125.suppl_1.360
Autor:
Lin Zhou, Yukai Liu, Wei E. Wang, Hongmei Ren, Caiyu Chen, Xinjian Chen, Chunyu Zeng, Shuo Zheng
Publikováno v:
Journal of Hypertension. 34:1599-1606
Background Dopamine receptors induce natriuresis in kidney. Previous studies have shown interactions between different subtypes of dopamine receptors in renal proximal tubule (RPT) cells. We hypothesize that D3 receptors have an interaction with D4 r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5e8fb30178ca25392da549ce9f88f898
https://doi.org/10.1097/hjh.0000000000000986
https://doi.org/10.1097/hjh.0000000000000986
Autor:
Wenbin Liu, Li Zhang, Yong Xiang Du, Adu, Hong Bing Gao, Ji Hui Zheng, Li Li Yu, Chao Xing Wang, Yu Guang Lv, Wei E Wang, Di Song
Publikováno v:
Applied Mechanics and Materials. :32-35
In this paper, a rare earth metal terbium ion as the central metal ion, a nanohydroxyapatite powder of the lanthanum doped terbium was synthesis by precipitation with hydroxyapatite as ligand. The sample was characterized by infrared spectrum, fluore
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9c9f471a6f9dc726c1f3691c283c386
https://doi.org/10.4028/www.scientific.net/amm.716-717.32
https://doi.org/10.4028/www.scientific.net/amm.716-717.32
Autor:
Hugo Bender, Olivier Richard, Niamh Waldron, Matty Caymax, Tommaso Orzali, Clement Merckling, Wei-E Wang, Gang Wang
Publikováno v:
ECS Transactions. 41:345-354
CMOS scaling for sub-12 nm nodes will need high-mobility channel semiconductors such as III-V materials to be integrated on large diameter Si substrates. A way to overcome lattice mismatch is to confine defects resulting from strain relaxation on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a52e94f6e3e7bf9d31e41a98e7b2310
https://doi.org/10.1149/1.3633315
https://doi.org/10.1149/1.3633315
Autor:
Minghwei Hong, T.H. Chiang, H.C. Chiu, J Dekoster, Cheng-Hsiung Lin, Wei-E Wang, T. D. Lin, J. Kwo, M.M. Heyns, Yu-Cheng Chang
Publikováno v:
Journal of Crystal Growth. 323:99-102
A3. Molecular beam epitaxy B2. Semiconducting gallium arcsenide B2. Dielectric materials B3. Field effect transistors abstract Systematic temperature-dependent capacitance-voltage and conductance measurements were used to study the electrical charact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88a0c5c2bc1dfb235d60c98f82ef6545
https://doi.org/10.1016/j.jcrysgro.2011.01.108
https://doi.org/10.1016/j.jcrysgro.2011.01.108
Autor:
Jerome Mitard, Kristin De Meyer, Wei-E Wang, Geert Eneman, Koen Martens, Marc Meuris, Thomas Hoffmann, Geert Hellings
Publikováno v:
IEEE Transactions on Electron Devices. 58:938-944
A technique is presented to study the electrostatic degradation of key germanium metal-oxide-semiconductor field-effect transistor (MOSFET) performance metrics such as the subthreshold slope SS, the drive current, and the off-state current. This is c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21408f16bb3a700d54bdc9b3297f9103
https://doi.org/10.1109/ted.2011.2106503
https://doi.org/10.1109/ted.2011.2106503