Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Wei-Cheng Zhuang"'
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 681-685 (2020)
A new self-converging programming characteristic in a single-poly floating-gate memory cell with full-compatibility to a CMOS logic technology is observed and studied. A uniquely design cell with a narrow-bridging line between two coupling capacitors
Externí odkaz:
https://doaj.org/article/da55bb9d3c28469fb2d99a1650a2c6ca
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-10 (2018)
Abstract Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide
Externí odkaz:
https://doaj.org/article/4ed9c5a0d4984ceaa86e2f0836e75173
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 681-685 (2020)
A new self-converging programming characteristic in a single-poly floating-gate memory cell with full-compatibility to a CMOS logic technology is observed and studied. A uniquely design cell with a narrow-bridging line between two coupling capacitors
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9cf66e3f11867ec9622086fcd12f87bd
https://doi.org/10.1109/jeds.2020.3005904
https://doi.org/10.1109/jeds.2020.3005904
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-10 (2018)
Nanoscale Research Letters
Nanoscale Research Letters
Variability in resistive random access memory cell has been one of the critical challenges for the development of high-density RRAM arrays. While the sources of variability during resistive switching vary for different transition metal oxide films, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::39e34c1d8b6b5d78366d11db73366eb1
http://link.springer.com/article/10.1186/s11671-018-2619-x
http://link.springer.com/article/10.1186/s11671-018-2619-x