Zobrazeno 1 - 10
of 80
pro vyhledávání: '"Wei ching chuang"'
Publikováno v:
Applied Sciences, Vol 13, Iss 22, p 12531 (2023)
Symbolic interval data analysis (SIDA) has been successfully applied in a wide range of fields, including finance, engineering, and environmental science, making it a valuable tool for many researchers for the incorporation of uncertainty and impreci
Externí odkaz:
https://doaj.org/article/7eb1db8fd9b94d4ba349874b6da1f3ea
Autor:
Wei ching chuang, 莊瑋靖
99
Nowadays, products delivered emotion by the visualized design method of products’ shapes, functions and semantics et al. Pleasurable affective factors also become an important subject on design research.This study applied visual fixation cl
Nowadays, products delivered emotion by the visualized design method of products’ shapes, functions and semantics et al. Pleasurable affective factors also become an important subject on design research.This study applied visual fixation cl
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/73010596528036612677
Publikováno v:
Sensors & Transducers, Vol 111, Iss 12, Pp 125-131 (2009)
An application of a multimode D-type optical fiber sensor (OFS) in temperature measurement is proposed. The sensor is based on the attenuated total reflection (ATR) effect and acts as a probe to sense a liquid or gas temperature in real-time. We use
Externí odkaz:
https://doaj.org/article/78b41df7f14d41d1b506a43e7570a3c9
Publikováno v:
Modern Physics Letters B. 35
In the present study, AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated through metal–organic chemical vapor deposition. Gate recess etching, combined with inductively coupled plasma reactive ion etching, was adopted, and etching
Publikováno v:
Modern Physics Letters B. 35
In this paper, AlGaN/GaN HEMTs with an AlN buffer layer were fabricated. Analyses on the crystal quality of the GaN epitaxial layer by Raman spectroscopy have been purposed. By introducing an AlN layer on sapphire substrate, the maximum drain current
Publikováno v:
2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE).
GaN-based electron mobility transistors (HEMTs) have been widely used in high-frequency or high-power device application. However, GaN-based HEMT is usually normally-on mode due to the high-density two-dimensional electron gas (2DEG) caused by its st
Publikováno v:
2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE).
In this work, a method of analyzing the crystal quality of epitaxial GaN by Raman spectroscopy was established. An AlN layer was deposited on sapphire substrate by sputtering and an AlGaN/GaN HEMT device is fabricated. The relationship between the di
Publikováno v:
2018 IEEE International Conference on Advanced Manufacturing (ICAM).
In this paper, a polymeric Bragg grating is covered on a D-shaped single mode optical fiber, which is side-polished on a convex polymeric structure formed on a glass substrate. The Bragg grating is transferred from a photoresist, formed by using holo
Autor:
Chun-Hsien Lee, Chun-Ying Lee, Chi-Ting Ho, Fu-Hsien Chen, Yi Ma, Chin-Cheng Chen, Wei-Ching Chuang, Tung-Lung Wu, Chun-Liang Hsu
Publikováno v:
Sensors and Materials. 32:2781
Autor:
Tung-Lung Wu, Teen-Hang Meen, Yu-Yao Kang, Wei-Ching Chuang, Chun-Ying Lee, Chun-Hsien Lee, Chi-Ting Ho
Publikováno v:
Sensors and Materials. 32:2077