Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Wei Yung Hsu"'
Autor:
Wei-Yung Hsu, 許暐咏
106
The International Union for Conservation of Nature and Natural Resources (IUCN) estimates 61% of the population will live in cities by 2030. Due to urbanization, parks and greenspaces are not only important recreational areas, but also wildl
The International Union for Conservation of Nature and Natural Resources (IUCN) estimates 61% of the population will live in cities by 2030. Due to urbanization, parks and greenspaces are not only important recreational areas, but also wildl
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/f742b3
Autor:
Q. Z. Hong, P.J Chen, Lissa K. Magel, Jiong-Ping Lu, H. L. Tsai, Girish A. Dixit, Joseph D. Luttmer, Robert H. Havemann, Wei-Yung Hsu
Publikováno v:
Thin Solid Films. 320:20-25
The thermal stability of Al–0.5% Cu/barrier/TiSi x multilayer structures is investigated. The barriers studied in this work are TiN films prepared by physical vapor deposition (PVD) and TiN-based barrier films prepared by metal–organic chemical v
Autor:
Yu-Pei Chen, Joseph D. Luttmer, Wei-Yung Hsu, Jiong-Ping Lu, Anthony J. Konecni, Girish A. Dixit, Robert H. Havemann
Publikováno v:
Thin Solid Films. 320:73-76
New contact fill integration schemes were developed for high aspect ratio Gb DRAM contact metallization. Integration schemes for both tungsten-plug contacts and aluminum-plug contacts were studied. For tungsten-plug contacts, various types of titaniu
Publikováno v:
Journal of Applied Physics. 77:3420-3425
Epitaxial lithium tantalate thin films were grown on prismatic sapphire substrates by a specially designed ultrasonic nozzle assisted liquid injection metalorganic chemical vapor deposition system. The films were characterized by x‐ray diffraction
Autor:
Wei-Yung Hsu, Mool C. Gupta
Publikováno v:
Applied optics. 32(12)
We obtain the periodic modulation of domain polarization by patterning MgO on the positive C-face of LiNbO(3), followed by Li outdiffusion to induce domain inversion. We obtain domain inversion lines (1.5 microm) by heat treating LiNbO(3) at 1000 deg
Autor:
Q. Z. Hong, J. D. Luttmer, L. K. Magel, Wei-Yung Hsu, Robert H. Havemann, Jiong-Ping Lu, Girish A. Dixit
Publikováno v:
ChemInform. 28
A new process for preparing TiN-based barrier films is reported. The process consists of thermal decomposition of a metallorganic precursor, tetrakis(dimethylamino)-titanium, followed by postdeposition annealing in silane ambient. Thin films fabricat
Publikováno v:
IEEE Transactions on Components, Hybrids, and Manufacturing Technology. 15:393-396
The resistance and impedance as functions of frequency for Dupont 1600-series thick-film resistors are investigated. It is reported that there exists an abrupt decrease in the resistance around 1 MHz. An equivalent circuit model is proposed to explai
Publikováno v:
MRS Proceedings. 991
Planarization efficiency is a key parameter to evaluate the process effectiveness of CMP. When the Cu thickness was removed beyond the step height, under certain conditions, the recessed trenches become protruded, resulting in reverse topography. Thi
Autor:
M.C. Luche, Maurice Rivoire, M. Thothadri, K.-L. Chang, C. Goldberg, Liang-Yuh Chen, T. Berger, Romain Duru, G. Wyborn, Stan D. Tsai, M. Mellier, You Wang, M. Zaleski, Wei-Yung Hsu, V. Ripoche
Publikováno v:
2007 IEEE International Interconnect Technology Conferencee.
In this work, we demonstrate the capability of Ecmp to meet the 45 nm and 32 nm technology node requirements in terms of topography behavior, the related electrical spread, lithography DOF budget and ULK compatibility.
Publikováno v:
Journal of The Electrochemical Society. 145:L21-L23
A new process for depositing tungsten nitride (WN x ) thin films is reported. It is based on plasma-enhanced chemical vapor deposition (PECVD) using WF 6 + N 2 + H 2 chemistry. High purity films that are stable in air have been obtained using the PEC