Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Wei Ti Lee"'
Autor:
Paul K. Isbester, Ganesh Subramanian, Padraig Timoney, Taher Kagalwala, Dmitry Kislitsyn, Heath Pois, Mark Klare, Daniel Kandel, Michal Yachini, Wei Ti Lee, Vanessa Zhang, Mitch Shiver, Saurabh Singh, Parker Lund
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Autor:
Robinhsinkuo Chao, Matthew Sendelbach, Susan Ng-Emans, Veeraraghavan S. Basker, Wei Ti Lee, Juntao Li, Gilad Barak, John G. Gaudiello, Brock Mendoza, Tenko Yamashita, Gangadhara Raja Muthinti, Abraham Arceo de la Pena, Aron Cepler, Nicolas Loubet, Dexin Kong
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
Multi-channel gate all around (GAA) semiconductor devices require measurements of more target parameters than FinFET devices, due in part to the increased complexity of the different structures needed to fabricate nanosheet devices. In some cases, mu
Autor:
Michael Shifrin, Robin Chao, Gangadhara Raja Muthinti, Matthew Sendelbach, Wei Ti Lee, Abraham Arceo de la Pena, Ronen Urenski, Susan Emans, Jacques Simon, John G. Gaudiello, Mary Breton, Aron Cepler, Yoav Etzioni
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXI.
Electrical test measurement in the back-end of line (BEOL) is crucial for wafer and die sorting as well as comparing intended process splits. Any in-line, nondestructive technique in the process flow to accurately predict these measurements can signi
Autor:
Tenko Yamashita, Shay Wolfling, Sivananda K. Kanakasabapathy, Gangadhara Raja Muthinti, Wei Ti Lee, Abraham Arceo de la Pena, Michael A. Guillorn, Juntao Li, Daniel Kandel, John G. Gaudiello, Susan Emans, K. Matney, Avron Ger, Matthew Wormington, Roy Koret, Aron Cepler, Matthew Sendelbach, Nicolas Loubet, Peter Gin, Robin Chao
Publikováno v:
SPIE Proceedings.
Multi-channel gate all around (GAA) semiconductor devices march closer to becoming a reality in production as their maturity in development continues. From this development, an understanding of what physical parameters affecting the device has emerge
Autor:
Byung Cheol (Charles) Kang, Michael Lenahan, Mainul Hossain, Naren Yellai, Paul Isbester, Tom Larson, Prasad Dasari, Givantha Iddawela, Mark Klare, Alok Vaid, Wei Ti Lee, Michael Kwan, Matthew Sendelbach, Padraig Timoney, Sridhar Mahendrakar, Heath Pois, Cornel Bozdog, Abner Bello
Publikováno v:
SPIE Proceedings.
Complexity of process steps integration and material systems for next-generation technology nodes is reaching unprecedented levels, the appetite for higher sampling rates is on the rise, while the process window continues to shrink. Current thickness
Autor:
Timothy J. McArdle, Michael Kwan, Alok Vaid, Mark Klare, Heath Pois, Ganesh Subramanian, Wei Ti Lee, Jeremy A. Wahl, Ying Wang, Dina H. Triyoso, Mainul Hossain, Abner Bello, Tom Larson
Publikováno v:
SPIE Proceedings.
Planar fully-depleted silicon-on-insulator (FDSOI) technology potentially offers comparable transistor performance as FinFETs. pFET FDOSI devices are based on a silicon germanium (cSiGe) layer on top of a buried oxide (BOX). Ndoped interfacial layer
Autor:
B. Lherron, Kwanghoon Kim, Wei Ti Lee, Motoyama Koichi, Bartlet H. DeProspo, John G. Gaudiello, Cindy Goldberg, Robin Chao, Theodorus E. Standaert
Publikováno v:
SPIE Proceedings.
This paper demonstrates the synergy between X-rays techniques and scatterometry, and the benefits to combine the data to improve the accuracy and precision for in-line metrology. Particular example is given to show that the hybridization addresses th
Autor:
Jennifer Fullam, Wei Ti Lee, Bing Sun, Srinivasan Rangarajan, Saiqa Farhat, Ying Wang, Mike Kwan, Mark Klare, Heath Pois, Nicolas Loubet, Qing Liu, Sylvian Maitrejean, Tom Larson, B. Lherron, Romain Wacquez, John G. Gaudiello
Publikováno v:
25th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC 2014).
The thickness and composition determination of Silicon-Germanium (SiGe) films have been demonstrated using simultaneous X-ray Photoelectron (XPS) and X-ray Fluorescence (XRF) measurements. Measurements of SiGe films in various applications were explo
Autor:
Wei Ti Lee, Richard I. Masel
Publikováno v:
The Journal of Physical Chemistry A. 102:2332-2341
Marcus originally derived the Marcus equation to predict Bronsted coefficients for electron-transfer reactions. However in the literature it is often assumed that Marcus' result can be extended to predict positions of the transition state for atom-tr
Autor:
Richard I. Masel, Wei Ti Lee
Publikováno v:
Journal of Catalysis. 165:80-90
This paper shows that a simple heuristic, that the intrinsic barriers for C–C and C–O bond scission is 20–40 kcal/mole higher than the intrinsic barriers for C–H bond scission, provides useful insights into reactions on surfaces. Quantum mech