Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Wei Sin Tan"'
Autor:
Liyang Zhang, Wei-Sin Tan, Simon Westwater, Antoine Pujol, Andrea Pinos, Samir Mezouari, Kevin Stribley, John Whiteman, John Shannon, Keith Strickland
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 6, Pp 457-462 (2015)
The commercial adoption of GaN-on-Si light emitting diode (LED) chip technology is lagging behind incumbent sapphire substrates due to significantly longer growth time and poorer crystalline quality. To address these challenges, we report on the grow
Externí odkaz:
https://doaj.org/article/70ccc3934eb44b469edaec3b9bd2da55
Autor:
Keith Strickland, John Shannon, Kevin Stribley, Samir Mezouari, John Whiteman, Wei Sin Tan, Andrea Pinos, Antoine Pujol, Liyang Zhang, Simon Westwater
Publikováno v:
physica status solidi c. 13:266-269
The manufacturability of blue LED structures grown on 6-inch Si (111) substrates is reported. The totally epi-structure thickness is only 3.75 μm, which allows faster epitaxy process throughput and lower manufacturing costs. Well controlled strain e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65e19263d00113b87aaae5e1b308051d
https://doi.org/10.1002/pssc.201510168
https://doi.org/10.1002/pssc.201510168
Autor:
John Whiteman, Simon Westwater, Wei-Sin Tan, John Shannon, Liyang Zhang, Kevin Stribley, Samir Mezouari, Keith Strickland, Antoine Pujol, Andrea Pinos
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 6, Pp 457-462 (2015)
The commercial adoption of GaN-on-Si light emitting diode (LED) chip technology is lagging behind incumbent sapphire substrates due to significantly longer growth time and poorer crystalline quality. To address these challenges, we report on the grow
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f7223b87645e7e10be6ed5bc26e36b19
https://ieeexplore.ieee.org/document/7174951/
https://ieeexplore.ieee.org/document/7174951/
Autor:
Ashay Chitnis, Cheng-Yu Hu, Saad Murad, Wei-Sin Tan, Stephan Lutgen, Andrea Pinos, Atsushi Nishikawa, Lars Groh
Publikováno v:
physica status solidi c. 11:624-627
We report on the crystal quality and on-wafer device performance of GaN-on-Si LED wafers grown by metalorganic chemical vapour deposition on Si(111) substrates. Average XRD FWHM of 343 arcsec and 456 arcsec for the 002 and 102 reflections, respective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c0a578444863a5e39a9f42b2904f01a
https://doi.org/10.1002/pssc.201300477
https://doi.org/10.1002/pssc.201300477
Autor:
Ashay Chitnis, Cheng-Yu Hu, Wei-Sin Tan, Andrea Pinos, Takuma Yagi, Atsushi Nishikawa, Saad Murad, Lars Groh, Stephan Lutgen, Victor Sizov
Publikováno v:
physica status solidi c. 11:945-948
By means of our patented strain engineering technology, we achieved high crystal quality and near zero wafer bow on our 150 mm GaN-on-Si wafers. To show the feasibility of our wafers for HEMTs with large gate periphery, we investigated the buffer bre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8e054a72bfa844ad5f5ac16b154c63fd
https://doi.org/10.1002/pssc.201300534
https://doi.org/10.1002/pssc.201300534
Autor:
Liyang Zhang, Wei Sin Tan, Westwater, Simon, Pujol, Antoine, Pinos, Andrea, Mezouari, Samir, Stribley, Kevin, Whiteman, John, Shannon, John, Strickland, Keith
Publikováno v:
Physica Status Solidi (C); May2016, Vol. 13 Issue 5/6, p266-269, 4p
Autor:
Saad Murad, Wei-Sin Tan, Ashay Chitnis, Andrea Pinos, Cheng-Yu Hu, Stephan Lutgen, Lars Groh, Atsushi Nishikawa
Publikováno v:
Applied Physics Express. 6:095502
We report on the on-wafer device characteristics of 150 and 200 mm GaN-on-Si-based blue LED wafers grown by metalorganic chemical vapor deposition on Si(111) substrates with electroluminescence at 447 nm. Excellent uniformity was achieved with standa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::887a4fce1a806903033cceaff9767657
https://doi.org/10.7567/apex.6.095502
https://doi.org/10.7567/apex.6.095502
Autor:
Wei-Sin Tan, Valerie Bousquet, Koji Takahashi, Masataka Ohta, Yuhzoh Tsuda, Matthias Kauer, Akira Ariyoshi
Publikováno v:
Applied Physics Express. 2:112101
We report on a novel method using lattice matched AlInN as the current confinement layer for inner stripe laser diodes. Optimisation of the sample preparation techniques and metal organic chemical vapor deposition (MOCVD) regrowth conditions resulted
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02c939574831093f5cae0a6d79c5b158
https://doi.org/10.1143/apex.2.112101
https://doi.org/10.1143/apex.2.112101
Publikováno v:
Japanese Journal of Applied Physics. 48:072102
We report on a method for using aluminium nitride (AlN) as the electrical insulator in ridge waveguide blue-violet laser diodes (LDs). The AlN layer is deposited by molecular beam epitaxy, with good sidewall conformality. The slope efficiency (0.66 W
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9f533bed39c56d9c38d417c14c3f1b7
https://doi.org/10.1143/jjap.48.072102
https://doi.org/10.1143/jjap.48.072102