Zobrazeno 1 - 10
of 23
pro vyhledávání: '"Wei Shiuan Tseng"'
Publikováno v:
Journal of Science: Advanced Materials and Devices, Vol 8, Iss 4, Pp 100605- (2023)
Practical and efficient integrations of graphene into real applications are identically important as their various superior properties. Among various graphene-related materials, vertical graphene stripes (VGSs, in nanoscale) are one kind of interconn
Externí odkaz:
https://doaj.org/article/0827048fc73a41fa8e25e1534a146f5d
Autor:
Wei-Shiuan Tseng, Jheng-Siou Hung, Zheng-Yue Jian, Jian-Zhi Huang, Jin-Bin Yang, Wei-Hsuan Hsu, Chih-I Wu, Xue Li Huang, Mei-Hsin Chen
Publikováno v:
Solar Energy. 233:345-352
Publikováno v:
Optics express. 29(24)
We report a systematic study of the optical absorption of twisted bilayer graphene (tBLG) across a large range of twist angles from 0° to 30° using a high-resolution reflectance confocal laser microscopy (RCLM) system. The high-quality single cryst
Autor:
Marcus Teague, Harry A. Atwater, Wei Shiuan Tseng, Nai-Chang Yeh, Wei-Hsiang Lin, Cora M. Went, George R. Rossman
Publikováno v:
ACS Nano. 14:1350-1359
Monolayer transition-metal dichalcogenides (TMDCs) in the 2H-phase are promising semiconductors for opto-valleytronic and opto-spintronic applications because of their strong spin-valley coupling. Here, we report detailed studies of opto-valleytronic
Publikováno v:
Optics Express. 30:28817
In this study, we firstly propose an optical approach to investigate the ion profile of organic films in light-emitting electrochemical cells (LECs) without any invasive sputtering processes. In contrast to previous literatures, this pure optical str
Deposition of layers of graphene on silicon has the potential for a wide range of optoelectronic and mechanical applications. However, direct growth of graphene on silicon has been difficult due to the inert, oxidized silicon surfaces. Transferring g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c4a030a25adcedf3b51e40fd813364fa
https://resolver.caltech.edu/CaltechAUTHORS:20200506-092128313
https://resolver.caltech.edu/CaltechAUTHORS:20200506-092128313
Autor:
Yen Chun Chen, Nai-Chang Yeh, George R. Rossman, Yu-Shu Wu, Chien-Chang Chen, Chii-Dong Chen, Wei Shiuan Tseng, Wei-Hsiang Lin
Plasma enhanced chemical vapor deposition (PECVD) techniques have been shown to be an efficient method to achieve single-step synthesis of high-quality monolayer graphene (MLG) without the need of active heating. Here we report PECVD-growth of single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::45e0fb5c7bbcec4da6582e73e3f4ad5c
Publikováno v:
Nanoscale. 9:19227-19235
We report the long-term stability of water-sensitive hybrid perovskites CH3NH3PbI3 that were protected with monolayer graphene. This successful passivation was enabled by our development of a new water-free and polymer-free graphene transfer method.
Autor:
Wei-Hsiang, Lin, Wei-Shiuan, Tseng, Cora M, Went, Marcus L, Teague, George R, Rossman, Harry A, Atwater, Nai-Chang, Yeh
Publikováno v:
ACS nano. 14(2)
Monolayer transition-metal dichalcogenides (TMDCs) in the 2H-phase are promising semiconductors for opto-valleytronic and opto-spintronic applications because of their strong spin-valley coupling. Here, we report detailed studies of opto-valleytronic
The realization of many promising technological applications of graphene and graphene-based nanostructures depends on the availability of reliable, scalable, high-yield and low-cost synthesis methods. Plasma enhanced chemical vapor deposition (PECVD)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::00698cf0788bf9b7627f517ae350d0fa
https://resolver.caltech.edu/CaltechAUTHORS:20190122-090139696
https://resolver.caltech.edu/CaltechAUTHORS:20190122-090139696