Zobrazeno 1 - 4
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pro vyhledávání: '"Wei Kung Sung"'
Autor:
Wei Kung Sung, 宋為剛
102
The conventional floating gate memory had been replaced by the MOHOS-type memory. In this study, the Ti-doped CeO2 was used as trapping layer due to larger dielectric constant and smaller leakage current than the CeO2. Besides, the plasma tr
The conventional floating gate memory had been replaced by the MOHOS-type memory. In this study, the Ti-doped CeO2 was used as trapping layer due to larger dielectric constant and smaller leakage current than the CeO2. Besides, the plasma tr
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/69011071151784123235
Autor:
Wei Kung Sung, Chan Yu Lin, Hsiang Chen, Chyuan Haur Kao, Ming Ling Lee, Chun Fu Lin, Rama Krushna Mahanty, Kow Ming Chang
Publikováno v:
Vacuum. 140:47-52
In this study, we proposed a metal-oxide high-k-oxide-silicon (MOHOS) memory device using a nickel oxide film as the charge trapping layer, and studied the effect of post-deposition rapid thermal annealing (RTA) on the physical and electrical propert
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c88b0b176d7e2ad7143ff9e0406a005f
https://doi.org/10.1016/j.vacuum.2017.02.009
https://doi.org/10.1016/j.vacuum.2017.02.009
Autor:
Chia Lun Chang, Chun Fu Lin, Kow Ming Chang, Che Chun Liu, Hsiang Chen, Shan Wei Chang, Wei Kung Sung, Min Hau Kuo, Che Wei Chang, Chyuan Haur Kao, Ming Ling Lee
Publikováno v:
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In the paper, the EIS structure with high-k CeO 2 sensing film has more responsive to H+ relative to Na+ and K+. The CeO 2 sensing membrane annealed with O 2 at 800°C shows a higher sensitivity of 58.76 mV/pH, higher linearity, lower hysteresis volt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c3155340ffb6a9995c5bf29f3c319d3
https://doi.org/10.1109/icsict.2014.7021639
https://doi.org/10.1109/icsict.2014.7021639
Autor:
Wei Kung Sung, Hsiang Chen, Shan Wei Chang, Chia Lun Chang, Min Hau Kuo, Chih Ju Lin, Chyuan Haur Kao, Chun Fu Lin, Ming Ling Lee, Kow Ming Chang, Che Wei Chang
Publikováno v:
2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).
In the study, the MOHOS-type memory using ZrO 2 trapping layer with nitrogen incorporation and combined with rapid thermal annealing has been investigated. It can be found that the memory device by nitrogen incorporation annealed at 900°C can improv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb1cf63441d59423a1bef3e7ba0330ce
https://doi.org/10.1109/icsict.2014.7021622
https://doi.org/10.1109/icsict.2014.7021622