Zobrazeno 1 - 10
of 126
pro vyhledávání: '"Wei Ching Chuang"'
Publikováno v:
Applied Sciences, Vol 13, Iss 22, p 12531 (2023)
Symbolic interval data analysis (SIDA) has been successfully applied in a wide range of fields, including finance, engineering, and environmental science, making it a valuable tool for many researchers for the incorporation of uncertainty and impreci
Externí odkaz:
https://doaj.org/article/7eb1db8fd9b94d4ba349874b6da1f3ea
Publikováno v:
Modern Physics Letters B. 35
In the present study, AlGaN/GaN high-electron-mobility transistors (HEMTs) were fabricated through metal–organic chemical vapor deposition. Gate recess etching, combined with inductively coupled plasma reactive ion etching, was adopted, and etching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6de5902204086c69ccd8b2696ee0b49b
https://doi.org/10.1142/s021798492141013x
https://doi.org/10.1142/s021798492141013x
Publikováno v:
Modern Physics Letters B. 35
In this paper, AlGaN/GaN HEMTs with an AlN buffer layer were fabricated. Analyses on the crystal quality of the GaN epitaxial layer by Raman spectroscopy have been purposed. By introducing an AlN layer on sapphire substrate, the maximum drain current
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5946cecf9fe5942f40021a4e9862045
https://doi.org/10.1142/s0217984921410104
https://doi.org/10.1142/s0217984921410104
Publikováno v:
2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE).
GaN-based electron mobility transistors (HEMTs) have been widely used in high-frequency or high-power device application. However, GaN-based HEMT is usually normally-on mode due to the high-density two-dimensional electron gas (2DEG) caused by its st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f672d94588b62dcf3aa16a0a3567e556
https://doi.org/10.1109/ecice50847.2020.9301926
https://doi.org/10.1109/ecice50847.2020.9301926
Publikováno v:
2020 IEEE Eurasia Conference on IOT, Communication and Engineering (ECICE).
In this work, a method of analyzing the crystal quality of epitaxial GaN by Raman spectroscopy was established. An AlN layer was deposited on sapphire substrate by sputtering and an AlGaN/GaN HEMT device is fabricated. The relationship between the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e0dddfd90a2e0afed5b7e45a324402a7
https://doi.org/10.1109/ecice50847.2020.9301986
https://doi.org/10.1109/ecice50847.2020.9301986
Autor:
Chin-Cheng Chen, Fu-Hsien Chen, Chun-Liang Hsu, Wei-Ching Chuang, Chun-Ying Lee, Chun-Hsien Lee, Chi-Ting Ho, Yi Ma, Tung-Lung Wu
Publikováno v:
Sensors & Materials; 2020, Vol. 32 Issue 8, Part 2, p2709-2728, 20p
Autor:
Wei-Ching Chuang, Chun-Ying Lee, Tung-Lung Wu, Chi-Ting Ho, Yu-Yao Kang, Chun-Hsien Lee, Teen-Hang Meen
Publikováno v:
Sensors & Materials; 2020, Vol. 32 Issue 6, Part 1, p2077-2087, 11p
Autor:
Chun-Hsien Lee, Chun-Ying Lee, Chi-Ting Ho, Fu-Hsien Chen, Yi Ma, Chin-Cheng Chen, Wei-Ching Chuang, Tung-Lung Wu, Chun-Liang Hsu
Publikováno v:
Sensors and Materials. 32:2781
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36f39dcb1929c6dc97df041a3b1994d7
https://doi.org/10.18494/sam.2020.2684
https://doi.org/10.18494/sam.2020.2684
Autor:
Tung-Lung Wu, Teen-Hang Meen, Yu-Yao Kang, Wei-Ching Chuang, Chun-Ying Lee, Chun-Hsien Lee, Chi-Ting Ho
Publikováno v:
Sensors and Materials. 32:2077
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87f1248cddcdaab8daf1c8a626bcbeba
https://doi.org/10.18494/sam.2020.2802
https://doi.org/10.18494/sam.2020.2802
Publikováno v:
2018 IEEE International Conference on Advanced Manufacturing (ICAM).
In this paper, a polymeric Bragg grating is covered on a D-shaped single mode optical fiber, which is side-polished on a convex polymeric structure formed on a glass substrate. The Bragg grating is transferred from a photoresist, formed by using holo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::902c7605fe31889b4b8de0f5d552523d
https://doi.org/10.1109/amcon.2018.8615040
https://doi.org/10.1109/amcon.2018.8615040