Zobrazeno 1 - 10
of 155
pro vyhledávání: '"Wei Chih Cheng"'
Autor:
Hong-Wei Huang, Chien-Wei Huang, Yi-Chian Chen, Wei-Chih Cheng, Chun-Nien Liu, Chia-Chin Chiang
Publikováno v:
Ceramics, Vol 7, Iss 3, Pp 1147-1158 (2024)
In this study, we demonstrate the high luminous efficacy of 118 lm/W and the high reliability of white LEDs (WLEDs) through 450 °C thermal aging, utilizing four-inch YAG: Ce3+ phosphor-in-glass (PiG) plates designed for vehicle headlights. The sinte
Externí odkaz:
https://doaj.org/article/5860b25f1ee7455f98bc19cdc4c7e00c
Autor:
Qiaoyu Hu, Wei-Chih Cheng, Xiguang Chen, Chenkai Deng, Lina Liao, Wenmao Li, Yang Jiang, Jiaqi He, Yi Zhang, Chuying Tang, Peiran Wang, Kangyao Wen, Fangzhou Du, Yifan Cui, Mujun Li, Wenyue Yu, Robert Sokolovskij, Nick Tao, Qing Wang, Hongyu Yu
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 12, Pp 875-880 (2024)
This study investigates the DC and RF performance of RF GaN High Electron Mobility Transistors (HEMTs) subjected to surface pretreatments by N2 and N2O plasma. The filling of nitrogen vacancies or the passivation effect introduced by the thin GaON la
Externí odkaz:
https://doaj.org/article/a28f9147334140db810717599c6c959e
Autor:
Chenkai Deng, Chuying Tang, Peiran Wang, Wei-Chih Cheng, Fangzhou Du, Kangyao Wen, Yi Zhang, Yang Jiang, Nick Tao, Qing Wang, Hongyu Yu
Publikováno v:
Nanomaterials, Vol 14, Iss 22, p 1817 (2024)
In this work, we present the novel application of SiNx stress-engineering techniques for the suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors (HEMTs), accompanied by a comprehensive analysis of the underlying mecha
Externí odkaz:
https://doaj.org/article/b90927515597489db68dd050236b6d89
Autor:
Hong-Wei Huang, Chien-Wei Huang, Yi-Chian Chen, Hsing-Kun Shih, Wei-Chih Cheng, Chun-Nien Liu, Chia-Chin Chiang
Publikováno v:
Micromachines, Vol 15, Iss 8, p 946 (2024)
A novel five-surface phosphor-in-glass (FS-PiG) structure for high illumination and excellent color uniformity in large-view scale LEDs for sensor light source application is demonstrated. YAG phosphor (Y3Al5O12:Ce3+) was uniformly mixed with ceramic
Externí odkaz:
https://doaj.org/article/118fecea64134cb3b3192c16f7ba1075
Autor:
Chun-Nien Liu, Kai-Chieh Chang, Chia-Ling Tsai, Wei-Chih Cheng, Tien-Tsorng Shih, Sheng-Lung Huang, Wood-Hi Cheng
Publikováno v:
IEEE Photonics Journal, Vol 15, Iss 3, Pp 1-6 (2023)
A record net gain of 17-dB has been demonstrated in a 300-nm broadband single-mode Cr-doped crystalline core fiber (CCF) with a 19-μm core diameter and 18-cm fiber length. The gain-per-unit-length of the CCF, which is an impressive 94 dB/m, is signi
Externí odkaz:
https://doaj.org/article/95bb7808efaa4218a1b73c96779515b3
Publikováno v:
IEEE Photonics Journal, Vol 13, Iss 3, Pp 1-10 (2021)
High color rendering index (CRI) of 97 and wide correlated-color temperatures (CCTs) range of 2100–7600 K in white light-emitting diodes (WLEDs) employing the two-inch diameter of CaAlSiN3: Eu2+ (red phosphor) and Lu3Al5O12: Ce3+ (green phosphor) c
Externí odkaz:
https://doaj.org/article/5066b49d6d38448e8edc977db15069eb
Autor:
Chun-Nien Liu, Jhuo-Wei Li, Yung-Hsiang Tung, Chun-Chuen Yang, Wei-Chih Cheng, Sheng-Lung Huang, Wood-Hi Cheng
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 2, Pp 1-11 (2020)
Tetrahedral chromium (Cr4+)-ions is the main contributor to gain in the broadband single-mode Cr-doped crystalline core fibers (SCCFs). We have demonstrated a gross gain of 8-dB on a length of 27-cm for a 300-nm broadband SCCF using a thermal anneali
Externí odkaz:
https://doaj.org/article/ad62e797c8534533921c04de9d968802
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 1138-1144 (2020)
Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices' on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two-dimension
Externí odkaz:
https://doaj.org/article/d7d5888297a048ab8bd37fca6bba9512
A high reliability and luminance of color wheel in laser light engine (LLE) employing novel phosphor-in-inorganic silicone (PiIS) fabricated at low temperature of 180°C for laser projector applications is presented and demonstrated for the first tim
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4c4199002e57fe44c0f189868af7026d
https://doi.org/10.1364/opticaopen.22291081
https://doi.org/10.1364/opticaopen.22291081
Autor:
Kai-Chieh Chang, Chia-Ling Tsai, Wei-Chih Cheng, null Zon, Chun-Nien Liu, Tien-Tsorng Shih, Sheng-Lung Huang, Charles W. Tu, Wood-Hi Cheng
Publikováno v:
Optical Fiber Communication Conference (OFC) 2023.
We demonstrate record gain of 18-dB broadband single-mode Cr-doped crystalline core fiber employing small core diameter. The gain-per-unit-length is 90 dB/m, which is higher than currently achieved Er and Bi-doped fibers of 0.6 - 3 dB/m.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eaa87796091b59c585203d09bbe2c744
https://doi.org/10.1364/ofc.2023.th3c.4
https://doi.org/10.1364/ofc.2023.th3c.4