Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Wei Chen, Wen"'
Publikováno v:
RSC Advances; 2024, Vol. 14 Issue 35, p25378-25384, 7p
Publikováno v:
AIP Advances, Vol 10, Iss 6, Pp 065119-065119-7 (2020)
Interface traps (ITs) and border traps (BTs) in Al2O3/GeOx/p-Ge gate stacks were characterized using deep-level transient spectroscopy. Through evaluating the gate stacks with different GeOx thicknesses, the respective BTs in Al2O3, the Al2O3/GeOx in
Externí odkaz:
https://doaj.org/article/0ed9396817d14cbc94f19b28a75b2697
Publikováno v:
ECS Transactions. 109:205-215
Heteroepitaxial growth of Ge on Si has great interest for various optoelectronic applications such as Ge photodiodes(1). However 4.2% of lattice mismatch causes dislocation formation and island growth. High quality Ge(001) growth techniques are repor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::919c1c1c57b5852a59380c3a6eb210e1
https://doi.org/10.1149/10904.0205ecst
https://doi.org/10.1149/10904.0205ecst
Publikováno v:
ECS Transactions. 109:343-350
Multilayered Ge nanodots have drawn much attention due to their potential applications in optoelectronics, such as photodetectors and lasers. Many groups studied multilayered Ge nanodots with Si spacers on Si(001) grown by Stranski-Krastanov (SK) gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::64cbc633abb698a8f72421693dc02abe
https://doi.org/10.1149/10904.0343ecst
https://doi.org/10.1149/10904.0343ecst
Heteroepitxy of group IV materials (Si, SiGe, and Ge) has great potential for boosting Si-based novel device performance because of the possibility for strain, band gap/Fermi-level engineering, and applying emerging artificial materials such as a sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8ed7aeb0f28d7cb82d316b1e274eac40
Publikováno v:
Materials Science in Semiconductor Processing. 162:107504
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6361568464ab81f9a85c9cfd8bf3386a
https://doi.org/10.1016/j.mssp.2023.107504
https://doi.org/10.1016/j.mssp.2023.107504
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:055001
Three-dimensional (3D) self-ordered Ge nanodots in cyclic epitaxial growth of Ge/SiGe superlattice on Si0.4Ge0.6 virtual substrate (VS) were fabricated by reduced pressure chemical vapor deposition. The Ge nanodots were formed by Stranski-Krastanov m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f099881b2fac5a18011300c518fa197
https://doi.org/10.1149/2162-8777/acce06
https://doi.org/10.1149/2162-8777/acce06
Publikováno v:
Japanese Journal of Applied Physics. 62:SC1057
Self-ordered multilayered Ge nanodots with SiGe spacers on a Si0.4Ge0.6 virtual substrate are fabricated using reduced-pressure chemical vapor deposition, and the mechanism of vertical ordering is investigated. The process conditions of Ge and SiGe l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5016c9936988ac1203f57c63e2a7da0f
https://doi.org/10.35848/1347-4065/acb05e
https://doi.org/10.35848/1347-4065/acb05e
Publikováno v:
ECS Journal of Solid State Science and Technology. 12:023014
A method for high quality epitaxial growth of Ge on Si (111) and Si (110) is investigated by reduced pressure chemical vapor deposition. Two step Ge epitaxy (low temperature Ge seed and high temperature main Ge growth) with several cycles of annealin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8f2dd9ad8b4510e33d43aa9b3953334
https://doi.org/10.1149/2162-8777/acbb9d
https://doi.org/10.1149/2162-8777/acbb9d
Publikováno v:
Cancer Biology & Medicine, Vol 7, Iss 1, Pp 44-47 (2010)
OBJECTIVE To analyze the prognostic factors in patients with non-Hodgkin’s lymphoma (NHL) and to investigate the prognostic value of the absolute lymphocyte count (ALC) in peripheral blood in NHL patients at admission. METHODS The clinical features
Externí odkaz:
https://doaj.org/article/5c3c834757c240af84e7f56ec519efda