Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Wei‐Sheng Yun"'
Autor:
Hsin‐Yuan Chiu, Tzu‐Ang Chao, Nathaniel S. Safron, Sheng‐Kai Su, San‐Lin Liew, Wei‐Sheng Yun, Po‐Sen Mao, Yu‐Tung Lin, Vincent Duen‐Huei Hou, Tung‐Ying Lee, Wen‐Hao Chang, Matthias Passlack, Hon‐Sum Philip Wong, Iuliana P. Radu, Han Wang, Gregory Pitner, Chao‐Hsin Chien
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (d
Externí odkaz:
https://doaj.org/article/262eb55fe9514f40947d0b2bde04564a
Autor:
Wei-Sheng Yun, 雲惟勝
98
In general, the dissociation of counterion from charged particle is difficult in a medium with low dielectric constant due to strong Coulomb attraction. However, in electronic paper, charged particles exist in low dielectric medium and migrat
In general, the dissociation of counterion from charged particle is difficult in a medium with low dielectric constant due to strong Coulomb attraction. However, in electronic paper, charged particles exist in low dielectric medium and migrat
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/53123748948791186407
Autor:
Tsung-En Lee, Yuan-Chun Su, Bo-Jiun Lin, Yi-Xuan Chen, Wei-Sheng Yun, Po-Hsun Ho, Jer-Fu Wang, Sheng-Kai Su, Chen-Feng Hsu, Po-Sen Mao, Yu-Cheng Chang, Chao-Hsin Chien, Bo-Heng Liu, Chien-Ying Su, Chi-Chung Kei, Han Wang, H.-S. Philip Wong, T. Y. Lee, Wen-Hao Chang, Chao-Ching Cheng, Iuliana P. Radu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Autor:
Terry Y.T. Hung, Meng-Zhan Li, Wei Sheng Yun, Sui An Chou, Sheng-Kai Su, Edward Chen, San Lin Liew, Ying-Mei Yang, Kuang-I Lin, Vincent Hou, T.Y. Lee, Han Wang, Albert Cheng, Minn-Tsong Lin, H.-S. Philip Wong, Iuliana P. Radu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
First Demonstration of GAA Monolayer-MoS2 Nanosheet nFET with 410μA μ m ID 1V VD at 40nm gate length
Autor:
Yun-Yan Chung, Bo-Jhih Chou, Chen-Feng Hsu, Wei-Sheng Yun, Ming-Yang Li, Sheng-Kai Su, Yu-Tsung Liao, Meng-Chien Lee, Guo-Wei Huang, San-Lin Liew, Yun-Yang Shen, Wen-Hao Chang, Chien-Wei Chen, Chi-Chung Kei, Han Wang, H.-S. Philip Wong, T. Y. Lee, Chao-Hsin Chien, Chao-Ching Cheng, Iuliana P. Radu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).