Zobrazeno 1 - 10
of 958
pro vyhledávání: '"Wei, Su-Huai"'
Many issues concerning the origin of high-temperature superconductivity (HTS) are still under debate. For example, how the magnetic ordering varies with doping and its relationship with the superconducting temperature; and why the maximal Tc always o
Externí odkaz:
http://arxiv.org/abs/2303.15018
Structural search and feature extraction are a central subject in modern materials design, the efficiency of which is currently limited, but can be potentially boosted by machine learning (ML). Here, we develop an ML-based prediction-analysis framewo
Externí odkaz:
http://arxiv.org/abs/2302.03331
Spin fluctuations have a substantial influence on the electron and lattice behaviors in magnetic materials, which, however, is difficult to be tracked properly by prevalent first-principles methods. We propose a versatile self-adaptive spin-constrain
Externí odkaz:
http://arxiv.org/abs/2208.04551
Autor:
Tao, Shengdan, Zhang, Xuanlin, Zhu, Jiaojiao, He, Pimo, Yang, Shengyuan A., Lu, Yunhao, Wei, Su-Huai
Inter-twisted bilayers of two-dimensional (2D) materials can host low-energy flat bands, which offer opportunity to investigate many intriguing physics associated with strong electron correlations. In the existing systems, ultra-flat bands only emerg
Externí odkaz:
http://arxiv.org/abs/2202.13791
Autor:
Wang, Shanshan, Huang, Menglin, Wu, Yu-Ning, Chu, Weibin, Zhao, Jin, Walsh, Aron, Gong, Xin-Gao, Wei, Su-Huai, Chen, Shiyou
Publikováno v:
Nature Computational Science 2, 486 (2022)
The lifetime of non-equilibrium electrons and holes in semiconductors is crucial for solar cell and optoelectronic applications. Non-adiabatic molecular dynamics (NAMD) simulations based on time-dependent density functional theory (TDDFT) are widely
Externí odkaz:
http://arxiv.org/abs/2202.08167
Defects are crucial in determining the overall physical properties of semiconductors. Generally, the charge-state transition level (TEL), one of the key physical quantities that determines the dopability of defects in semiconductors, is temperature d
Externí odkaz:
http://arxiv.org/abs/2201.00211
Publikováno v:
In Computer Physics Communications December 2024 305
Autor:
Meng, Dechao, Zhang, Guanghui, Li, Ming, Yang, Zeng-hui, Zhou, Hang, Lan, Mu, Liu, Yang, Hu, Shouliang, Song, Yu, Jiang, Chunsheng, Chen, Lei, Duan, Hengli, Yan, Wensheng, Xue, Jianming, Zuo, Xu, Du, Yijia, Dai, Gang, Wei, Su-Huai
Most oscillating reactions (ORs) happen in solutions. Few existing solid-based ORs either happen on solid/gas (e.g., oxidation or corrosion) or solid/liquid interfaces, or at the all-solid interfaces neighboring to metals or ionic conductors (e.g., e
Externí odkaz:
http://arxiv.org/abs/2107.05867
Autor:
Yang, Kaike, Yang, Huai, Sun, Yujia, Wei, Zhongming, Zhang, Jun, Luo, Jun-Wei, Tan, Ping-Heng, Li, Shu-Shen, Wei, Su-Huai, Deng, Hui-Xiong
Materials with ultralow thermal conductivity are of great interest for efficient energy conversion and thermal barrier coating. Copper-based semiconductors such as copper chalcogenides and copper halides are known to possess extreme low thermal condu
Externí odkaz:
http://arxiv.org/abs/2102.12619
Autor:
Song, Yu, Wei, Su-Huai
Publikováno v:
ACS Applied Electronic Materials 2 (12), 3783 (2020)
The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference between th
Externí odkaz:
http://arxiv.org/abs/2010.13045