DASP: Defect and Dopant ab-initio Simulation Package

Autor: Huang, Menglin, Zheng, Zhengneng, Dai, Zhenxing, Guo, Xinjing, Wang, Shanshan, Jiang, Lilai, Wei, Jinchen, Chen, Shiyou

Publikováno v: Journal of Semiconductors 43, 042101 (2022)

In order to perform automated calculations of defect and dopant properties in semiconductors and insulators, we developed a software package, Defect and Dopant ab-initio Simulation Package (DASP), which is composed of four modules for calculating: (i

Externí odkaz: http://arxiv.org/abs/2201.02079

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12-inch growth of uniform MoS2monolayer for integrated circuit manufacture

Autor: Xia, Yin, Chen, Xinyu, Wei, Jinchen, Wang, Shuiyuan, Chen, Shiyou, Wu, Simin, Ji, Minbiao, Sun, Zhengzong, Xu, Zihan, Bao, Wenzhong, Zhou, Peng

Publikováno v: Nature Materials; November 2023, Vol. 22 Issue: 11 p1324-1331, 8p

Intrinsic Defect Limit to the Growth of Orthorhombic HfO2 and (Hf,Zr)O2 with Strong Ferroelectricity: First-Principles Insights.

Autor: Wei, Jinchen, Jiang, Lilai, Huang, Menglin, Wu, Yuning, Chen, Shiyou

Publikováno v: Advanced Functional Materials; 10/14/2021, Vol. 31 Issue 42, p1-13, 13p

12-inch growth of uniform MoS 2 monolayer for integrated circuit manufacture.

Autor: Xia Y; State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China., Chen X; State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China., Wei J; State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China., Wang S; State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China., Chen S; State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China., Wu S; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China., Ji M; State Key Laboratory of Surface Physics and Department of Physics, Fudan University, Shanghai, China., Sun Z; State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China., Xu Z; Shenzhen SixCarbon Technology, Shenzhen, China. xu@6carbon.com., Bao W; State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China. baowz@fudan.edu.cn., Zhou P; State Key Laboratory of ASIC and System, School of Microelectronics, Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai, China. pengzhou@fudan.edu.cn.; Shanghai Center of Brain-inspired Intelligent Materials and Devices, East China Normal University, Shanghai, China. pengzhou@fudan.edu.cn.

Publikováno v: Nature materials [Nat Mater] 2023 Nov; Vol. 22 (11), pp. 1324-1331. Date of Electronic Publication: 2023 Sep 28.