Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Weerasaruth Kaenrai"'
Autor:
Peerasil Charoenyuenyao, Tomohiro Nogami, Adison Nopparuchikun, Nathaporn Promros, Weerasaruth Kaenrai, Thanachai Changcharoen, Rawiwan Chaleawpong, Phongsaphak Sittimart, Tsuyoshi Yoshitake
Publikováno v:
Journal of Nanoscience and Nanotechnology. 19:1445-1450
p-Type Si/intrinsic Si/n-type nanocrystalline iron disilicide heterojunctions were created by utilizing facing targets direct-current sputtering at the pressure of 1.33×10-1 Pa that investigated the photovoltaic properties. They exhibited a large le
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4eea1ec12e8fac5137af9e7612ba0e9e
https://doi.org/10.1166/jnn.2019.16234
https://doi.org/10.1166/jnn.2019.16234
Autor:
Weerasaruth, Kaenrai, Nathaporn, Promros, Phongsaphak, Sittimart, Rawiwan, Chaleawpong, Peerasil, Charoenyuenyao, Thanachai, Changcharoen, Adison, Nopparuchikun, Tomohiro, Nogami, Tsuyoshi, Yoshitake
Publikováno v:
Journal of nanoscience and nanotechnology. 19(3)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::6f9a1a45ca8162b087a82c8261c2c61e
https://pubmed.ncbi.nlm.nih.gov/30469203
https://pubmed.ncbi.nlm.nih.gov/30469203
Publikováno v:
International Journal of Nanotechnology. 13:903
In this study, n-type nanocrystalline FeSi2/p-type Si heterojunctions were fabricated using facing-target direct-current sputtering (FTDCS). The possible transportation mechanisms of carriers were investigated by analysing the dark J-V characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aacb8efb2d2ac98bdde76ffd70715f8f
https://doi.org/10.1504/ijnt.2016.080368
https://doi.org/10.1504/ijnt.2016.080368