Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Weemaes, R.G.R."'
Autor:
van Zalinge, H., van Delft, F.C.M.J.M., Weemaes, R.G.R., van Thiel, E.F.M.J., Snijder, J., Nicolau, D.V.
Publikováno v:
In Microelectronic Engineering August 2011 88(8):2707-2709
Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering
Autor:
Ferain, I., Duffy, R., Collaert, N., van Dal, M.J.H., Pawlak, B.J., O’Sullivan, B., Witters, L., Rooyackers, R., Conard, T., Popovici, M., van Elshocht, S., Kaiser, M., Weemaes, R.G.R., Swerts, J., Jurczak, M., Lander, R.J.P., De Meyer, K.
Publikováno v:
In Solid State Electronics 2009 53(7):760-766
Autor:
Roozeboom, F., Klootwijk, J.H., Dekkers, W., Jinesh, K.B., Lamy, Y., Grunsven, van, E.C.E., Burghoorn, M., Sanders, F.H.M., Verheijen, M.A., Weemaes, R.G.R., Kaiser, M., Sakai, T., Kim, H.-D., Blin, D., Heil, S.B.S., Sanden, van de, M.C.M., Kessels, W.M.M., Michel, B., Lang, K.D.
Publikováno v:
Smart system integration and reliability : a special edition on the occasion of Herbert Reichl’s 65th birthday, 120-131
STARTPAGE=120;ENDPAGE=131;TITLE=Smart system integration and reliability : a special edition on the occasion of Herbert Reichl’s 65th birthday
STARTPAGE=120;ENDPAGE=131;TITLE=Smart system integration and reliability : a special edition on the occasion of Herbert Reichl’s 65th birthday
Future generations of cellular RF transceivers require higher degrees of integration, presumably using the third dimension. This paper describes technologies that we recently studied and which have found or may soon find their implementation in RF an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::85ec7d175da2cfa079a7f5fd0d2538aa
https://research.tue.nl/nl/publications/d15c9318-7f8b-4589-8047-3db4790e700b
https://research.tue.nl/nl/publications/d15c9318-7f8b-4589-8047-3db4790e700b
Autor:
Pawlak, B.J., Duffy, R., Dal, van, M.J.H., Voogt, F.C., Weemaes, R.G.R., Roozeboom, F., Zalm, P.C., Bennett, Nick, Cowern, Nick, Pelaz, M.L., Law, M.
Publikováno v:
Doping engineering for front-end processing : symposium held March 25-27, 2008, San Francisco, California, U.S.A.
Doping of thin body Si becomes very essential topic due to increasing interest of forming source/drain regions in fully depleted planar silicon-on-isolator (SOI) devices or vertical Fin field-effect-transistors (FinFETs). To diminish the role of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=narcis______::386f4708219f27f95a2e034c1e4a5e1f
https://research.tue.nl/nl/publications/bf02950f-8637-4297-8243-7dc6420f2d7a
https://research.tue.nl/nl/publications/bf02950f-8637-4297-8243-7dc6420f2d7a
Autor:
Castro, D.T., Goux, L., Hurkx, G.A.M., Attenborough, K., Delhougne, R., Lisoni, J., Jedema, F.J., 't Zandt, M.A.A., Wolters, R.A.M., Gravesteijn, D.J., Verheijen, M., Kaiser, M., Weemaes, R.G.R.
Publikováno v:
2007 IEEE International Electron Devices Meeting; 2007, p315-318, 4p
Autor:
Singanamalla, R., Ravit, C., Vellianitis, G., Petry, J., Paraschiv, V., vanZijl, J.P., Brus, S., Verheijen, M., Weemaes, R.G.R., Kaiser, M., vanBerkum, J.G.M., Bancken, P., Vos, R., Yu, H., deMeyer, K., Kubicek, S., Biesemans, S., Hooker, J.C.
Publikováno v:
2006 International Electron Devices Meeting; 2006, p1-4, 4p
Autor:
Ikeda, A., Travaly, Y., Humbert, A., Hoofman, R.J.O.M., Li, Y.L., Tokei, Zs., Iacopi, F., Michelon, J., Bruynseraede, C., Willegems, M., Hendrickx, D., Van Aelst, J., Struyf, H., Versluijs, J., Heylen, N., Carbonell, L., Richard, O., Bender, H., Kaiser, M., Weemaes, R.G.R.
Publikováno v:
2006 International Interconnect Technology Conference; 2006, p42-44, 3p
Autor:
van Dal, M.J.H., Collaert, N., Doombos, G., Vellianitis, G., Curatola, G., Pawlak, B.J., Duffy, R., Jonville, C., Degroote, B., Altamirano, E., Kunnen, E., Demand, M., Beckx, S., Vandeweyer, T., Delvaux, C., Leys, F., Hikavyy, A., Rooyackers, R., Kaiser, M., Weemaes, R.G.R.
Publikováno v:
2007 IEEE Symposium on VLSI Technology; 2007, p110-111, 2p
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