Utilizing Low-Dose Transmission Electron Microscopy for Structure and Defect Identification in Group III – Nitride Electronic Devices

Autor: Specht, Petra, Luysberg, Martina, Chavez1, J., Weatherford, T.R., Anderson, T.J., Koehler, A.D., Kisielowski, C.

The article of record as published may be found at https://doi.org/10.1017/S1431927618010346 Group III – nitride materials are already used in multiple high speed transistor applications as well as in opto-electronics, from light emitting diodes to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2778::be337aacd2dab07536153c4ae8b83897
https://hdl.handle.net/10945/60685

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DC-to-mm-wave-absolute potential measurements inside digital microwave ICs using a micromachined photoconductive sampling probe

Autor: David, G., Whitaker, J.F., Weatherford, T.R., Jobe, K., Meyer, S., Bustamante, M., Goyette, W., Thomas, S. III, Elliott, K.

A micromachined photoconductive sampling probe is used to determine detailed wave forms at different circuit nodes and corresponding propagation delays from within an InP HBT frequency divider operating at 2.7 GHz. The results demonstrate for the fir

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2778::cae677195ea5d2fc8e9be3303c28088a
https://hdl.handle.net/10945/48701

Effects of low-temperature buffer-layer thickness and growth temperature on the SEE...

Autor: Weatherford, T.R., Marshall, P.W., Marshall, C.J., Fouts, D.J., Mathes, B., LaMacchia, M.

Publikováno v: IEEE Transactions on Nuclear Science. Dec97 Part 1 of 3, Vol. 44 Issue 6, p2298. 8p. 8 Diagrams, 2 Charts, 2 Graphs.

Low temperature (LT) grown GaAs buffer layers for III-V semiconductor processes.

Autor: Weatherford, T.R.

Publikováno v: GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium 21st Annual Technical Digest 1999 (Cat No99CH36369); 1999, p47-50, 4p