Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Wayne Ruch"'
Autor:
Hiroshi Mohri, Kunihiro Hosono, Keiko Hattori, Shogo Narukawa, Wayne Ruch, Morihisa Hoga, Yoshinori Nagaoka, Yumiko Maenaka, Toshio Suzuki, Masayoshi Mori, Venu Vellanki
Publikováno v:
SPIE Proceedings.
We have evaluated a unified mask pattern data format named "OASIS.MASK"1 and a unified job deck format named "MALY" 2 for mask tools as the input data formats of the inspection tool using the mask data and the photomask produced with the 65nm design
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a854f63b79d89bcfd6f1f78174f95fb6
https://doi.org/10.1117/12.824351
https://doi.org/10.1117/12.824351
Autor:
John Valadez, Ray Morgan, Bill Moore, Swapnajit Chakravarty, Steven Liu, John Burns, Wayne Ruch, Dvori Stoler, Weimin Ma
Publikováno v:
SPIE Proceedings.
Resolution limitations in the mask making process can cause differences between the features that appear in a database and those printed to a reticle. These differences may result from intentional or unintentional features in the database exceeding t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d476110f14e4dd4a19c077213bd3bc65
https://doi.org/10.1117/12.747302
https://doi.org/10.1117/12.747302
Autor:
Carl Hess, Wayne Ruch, Zongchang Yu, Z. Mark Ma, Lisa Fisher, William Volk, Weimin Ma, Carl Albert Vickery
Publikováno v:
SPIE Proceedings.
With expected implementation of low k1 lithography on 193nm scanners for 65nm node wafer production, high resolution defect inspection will be needed to insure reticle quality and reticle manufacture process monitoring. Reticle cost and reticle defec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ae282b348b7217ddd5ad1b805b31f2a
https://doi.org/10.1117/12.518071
https://doi.org/10.1117/12.518071
Autor:
William Volk, Sterling G. Watson, Wayne Ruch, Hector I. Garcia, Phillip Lim, William Broadbent
Publikováno v:
21st Annual BACUS Symposium on Photomask Technology.
A new die-to-database reticle inspection system has been developed to meet the production requirements for 130nm node 4x reticles, as well as, the early inspection requirements for 100nm node 4x reticles. This new system is based on the TeraStarT pla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fd9ed00227068c075855762d6991d1a
https://doi.org/10.1117/12.458271
https://doi.org/10.1117/12.458271
Publikováno v:
SPIE Proceedings.
In recent years a manufacturable inspection recipe has been limited by the number of nuisance defects instead of the true sensitivity capability of the inspection tool for the top of the line products. In general, the nuisance defects are a result fr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93e20864cc5b7cc04d805c6432bd6700
https://doi.org/10.1117/12.360247
https://doi.org/10.1117/12.360247
Publikováno v:
SPIE Proceedings.
As the drive towards increased production of VLSI type devices continues, integrated circuit fabrication has become increasingly dependent on stepper technology to meet the demands for denser geometries, smaller critical dimensions, and tighter regis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51bb2269b91f9c1e469cb2169ea1c3a5
https://doi.org/10.1117/12.963712
https://doi.org/10.1117/12.963712
Autor:
Eileen Jozefov, Wayne Ruch
Publikováno v:
SPIE Proceedings.
Die-to-database inspection allows a repetitive or non-repetitive pattern of any scale to be examined for data errors, random defects, and repetitive defects. This type of inspection finds repetitive defects that would not be detected in a die-to-die
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d2e5277973049926629b3da966c82c
https://doi.org/10.1117/12.967058
https://doi.org/10.1117/12.967058
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